A2I20D040GN 产品信息|NXP

A2I20D040GN

不推荐用于新设计

A2I20D040GN

不推荐用于新设计

特点


Airfast RF LDMOS Wideband Integrated Power Amplifier, 1400-2200 MHz, 5.0 W Avg., 28 V

封装


FM17F: plastic, flange mounted package; 17 leads flat; 1.02 mm pitch; 17.53 x 9.02 x 2.59 mm body

购买选项

A2I20D040GNR1

不推荐用于新设计

12NC: 935316286528

详细信息

订购

从分销商处购买

工作特点

参数
fi(RF) [max] (MHz)
2200
Number of pins
17
Package Style
DFM
Amp Class
AB
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.3
P1dB (Typ) (dBm)
45.6
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1400, 2200
Efficiency (Typ) (%)
21.8
Peak Power (Typ) (W)
44.6
Frequency Band (Hz)
1400000000, 2200000000
参数
Description
Airfast RF LDMOS Wideband Integrated Power Amplifier, 1400-2200 MHz, 5.0 W Avg., 28 V
fi(RF) [min] (MHz)
1400
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
5 @ AVG
P1dB (Typ) (W)
36.3
Gain (Typ) (dB)
32.7
Power Gain (Typ) (dB) @ f (MHz)
32.7 @ 1800
Frequency (Max) (MHz)
2200
Frequency (Min) (MHz)
1400
Frequency (Min-Max) (GHz)
1.4000001 to 2.2
frange [max] (MHz)
2200
frange [min] (MHz)
1400
Rth(j-a) (K/W)
1.3
Matching
input and output impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
46.5

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
A2I20D040GNR1(935316286528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
598.1

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
A2I20D040GNR1
(935316286528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明
A2I20D040GNR1
(935316286528)
854233

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
A2I20D040GNR1
(935316286528)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
A2I20D040GNR1
(935316286528)
2019-02-222019-05-22201808025F01IMPROVED PASSIVE COMPONENT ATTACH MATERIAL FOR TO270WB PACKAGES

更多信息 A2I20D040N

The A2I20D040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.