MRFX600H_600 W CW, 1.8-400 MHz, 65 V

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The MRFX600H, MRFX600HS and MRFX600GS high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.

数据手册

应用笔记

产品详情

Features

Unmatched input and output allowing wide frequency range utilization
Output impedance fits a 4:1 transformer
Device can be used single-ended or in a push-pull configuration
Qualified up to a maximum of 65 V_DD operation
Characterized from 30 to 65 V for extended power range
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
RoHS compliant

Industrial, scientific, medical (ISM)
- Laser generation
- Plasma generation
- Particle accelerators
- MRI, RF ablation and skin treatment
- Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
- HF communications
- Radar
Mobile Radio
- HF and VHF communications
- PMR base stations

RF Performance Tables

Typical Performance

Frequency (MHz)	Signal Type	V_DD (V)	P_out (W)	G_ps (dB)	η_D (%)
87.5-108^(1,2)	CW	62	680 CW	21.3	83.0
230⁽³⁾	Pulse (100 µsec, 20% Duty Cycle)	65	600 Peak	26.4	74.4

Load Mismatch/Ruggedness

Frequency (MHz)	Signal Type	VSWR	P_in (W)	Test Voltage	Result
230⁽³⁾	Pulse (100 µsec, 20% Duty Cycle)	> 65:1 at all Phase Angles	2.5 Peak (3 dB Overdrive)	65	No Device Degradation

1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz production test fixture.

购买/参数

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文档

快速参考恩智浦文档类别.

1-5 / 6 文件

^数据手册
MRFX600H 600 W CW, 1.8-400 MHz, 65 V Data Sheet

PDF版本 0Sep 20, 2018644.2 KBMRFX600HEnglish
^应用笔记
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

PDF版本 1Feb 24, 2011664.6 KBAN1908English
^{工程设计要点}
Using Data Sheet Impedances for RF LDMOS Devices

PDF版本 0Jan 19, 2004171.0 KBEB212English
^封装信息
NI-780S-4L

PDF版本 CAug 15, 201642.9 KB98ASA10718DEnglish
^封装信息
98ASA10793D, NI-780H-4L

PDF版本 AMar 21, 201647.9 KBSOT1827-1English
^封装信息
98ASA00238D, NI-C, 20.57x9.78x3.81, Pitch 8.88, 5 Pins, NI-780GS-4L

PDF版本 CFeb 26, 201647.2 KBSOT1805-1English

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设计资源

设计文件

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5 设计文件

收到完整的详细信息。 请参阅产品足迹及更多信息电子CAD文件.

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MRFX600H 230 MHz PCB DXF file

ZIP版本 0Sep 20, 2018 00:00:0015.7 KBMRFX600H-230-PCB
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MRFX600H 87.5-108 MHz Reference Circuit Design Files

ZIP版本 0Sep 20, 2019 00:00:001.2 MBMRFX600H-87.5-108-MHz-Reference-Circuit
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MRFX600H 87.5-108 MHz PCB DXF file

ZIP版本 0Sep 20, 2018 00:00:0016.7 KBMRFX600H-87.5-108-PCB
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MRFX600H 230 MHz Test Fixture Design Files

ZIP版本 0Sep 20, 2019 00:00:001.6 MBMRFX600H-230-MHz-Test-Fixture
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^计算器
MRFX600H RF Power Electromigration MTTF Calculation Program

XLSX版本 0Apr 3, 2019 00:00:0091.6 KBMRFX600H-MTTF-CALC
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600 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor