MRFX600H_600 W CW, 1.8-400 MHz, 65 V | NXP 半导体

600 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

  • 建议不要在新设计中使用本页介绍的产品。

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Features

  • Unmatched input and output allowing wide frequency range utilization
  • Output impedance fits a 4:1 transformer
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 65 VDD operation
  • Characterized from 30 to 65 V for extended power range
  • High breakdown voltage for enhanced reliability
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • RoHS compliant
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar
  • Mobile Radio
    • HF and VHF communications
    • PMR base stations

RF Performance Tables

Typical Performance

Frequency
(MHz)
Signal Type VDD
(V)
Pout
(W)
Gps
(dB)
ηD
(%)
87.5-108 (1,2)CW62680 CW21.383.0
230 (3)Pulse
(100 µsec, 20% Duty Cycle)
65600 Peak26.474.4

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
230 (3)Pulse
(100 µsec, 20% Duty Cycle)
> 65:1
at all Phase Angles
2.5 Peak
(3 dB Overdrive)
65No Device Degradation
1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz production test fixture.

购买/参数

2 结果

包含 2 不推荐用于新设计

订购

计算机辅助设计模型

状态

正常供应

正常供应

文档

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6 文件

紧凑列表

封装信息 (3)
工程设计要点 (1)
应用笔记 (1)
数据手册 (1)

设计文件

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5 设计文件

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