封装信息 (2) 98ASA00583D, TO-270WB-17, 17.53x9.02x2.59, Pitch 9.02, 18 Pins[SOT1730-1] PDFJan 22, 2016版本更新 B 98ASA00729D, TO-270WBG-17, 17.53x9.02x2.59, Pitch 1.02, 18 Pins[SOT1730-2] PDFJan 18, 2016版本更新 B 工程设计要点 (1) Using Data Sheet Impedances for RF LDMOS Devices[EB212] PDFJan 19, 2004版本更新 0 数据手册 (1) A3I35D025WN 3200-4000 MHz, 3.4 W Avg, 28 V Data Sheet[A3I35D025WN] PDFJun 11, 2018版本更新 0 该选项下未搜到结果。
封装信息 (2) 98ASA00583D, TO-270WB-17, 17.53x9.02x2.59, Pitch 9.02, 18 Pins[SOT1730-1] PDFJan 22, 2016版本更新 B 98ASA00729D, TO-270WBG-17, 17.53x9.02x2.59, Pitch 1.02, 18 Pins[SOT1730-2] PDFJan 18, 2016版本更新 B 工程设计要点 (1) Using Data Sheet Impedances for RF LDMOS Devices[EB212] PDFJan 19, 2004版本更新 0 数据手册 (1) A3I35D025WN 3200-4000 MHz, 3.4 W Avg, 28 V Data Sheet[A3I35D025WN] PDFJun 11, 2018版本更新 0
A3G18D510-04S1805-2200 MHz, 56 W Avg., 48 V Airfast® RF Power LDMOS Transistor购买选项A3T21H400W23S2110-2200 MHz, 71 W Avg., 28 V Airfast® RF Power LDMOS Transistor购买选项