A2T09D400-23N_716-960 MHz, 93 W平均值, 28 V | NXP 半导体

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技术

716-960 MHz，93 W平均值，28 V Airfast® LDMOS射频功率晶体管

A2T09D400-23N 建议不要在新设计中使用该软件
A2T09D400-23NR6 93 W对称Doherty LDMOS射频功率晶体管专为716至960 MHz频率范围的移动通信基站应用而设计。

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特征

  • 生产测试在对称Doherty配置中进行
  • 增大负栅源电压范围，改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范

RF Performance Table

800 MHz

典型Doherty单载波W-CDMA性能：VDD = 28 Vdc，IDQA = 1200 mA，VGSB = 1.12 Vdc，平均输出功率 = 93 W，输入信号PAR = 9.9 dB @ 0.01% CCDF。
频率 Gps
(dB)		 ηD
(%)		 输出PAR
(dB)		 ACPR
(dBc)
776 MHz17.845.97.0–36.8
806 MHz18.2–46.87.2–37.8
836 MHz17.948.07.1–37.1
N true 0 PSPA2T09D400-23Nzh 3 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 0 English A2T09D400-23N 716-960 MHz, 93 W Avg., 28 V Airfast<sup>&#174;</sup> RF power LDMOS transistor for cellular base stations 1457823191638724223927 PSP 448.3 KB None None documents None 1457823191638724223927 /docs/en/data-sheet/A2T09D400-23N.pdf 448345 /docs/en/data-sheet/A2T09D400-23N.pdf A2T09D400-23N documents N N 2016-10-31 A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T09D400-23N.pdf /docs/en/data-sheet/A2T09D400-23N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 11, 2016 980000996212993340 Data Sheet Y N A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet 工程设计要点 Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 3 A English OM-1230-4L2S 1458194636779707286560 PSP 90.3 KB None None documents None 1458194636779707286560 /docs/en/package-information/98ASA00885D.pdf 90330 /docs/en/package-information/98ASA00885D.pdf SOT1819-2 documents N N 2016-10-31 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins /docs/en/package-information/98ASA00885D.pdf /docs/en/package-information/98ASA00885D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 14, 2016 302435339416912908 Package Information D N 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins false 0 A2T09D400-23N downloads zh-Hans true 1 Y PSP Y Y 封装信息 1 /docs/en/package-information/98ASA00885D.pdf 2016-10-31 1458194636779707286560 PSP 3 Mar 14, 2016 Package Information OM-1230-4L2S None /docs/en/package-information/98ASA00885D.pdf English documents 90330 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00885D.pdf 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins /docs/en/package-information/98ASA00885D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins 90.3 KB SOT1819-2 N 1458194636779707286560 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 数据手册 1 /docs/en/data-sheet/A2T09D400-23N.pdf 2016-10-31 1457823191638724223927 PSP 1 Mar 11, 2016 Data Sheet A2T09D400-23N 716-960 MHz, 93 W Avg., 28 V Airfast<sup>&#174;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2T09D400-23N.pdf English documents 448345 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T09D400-23N.pdf A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T09D400-23N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet 448.3 KB A2T09D400-23N N 1457823191638724223927 true Y Products

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