A2T07D160W04S_716-960 MHz,30 W平均值,28 V | NXP 半导体

716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor

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特征

  • 专为宽瞬时带宽应用而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 可承受极高的输出VSWR和宽带运行条件
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个,32 mm卷带宽度,13英寸卷盘。

射频性能表

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 450 mA, VGSB = 1.2 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

880 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 450 mA, VGSB = 1.3 Vdc, Pout = 30 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
N true 0 PSPA2T07D160W04Szh 3 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 0 English The A2T07D160W04SR3 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz. 1407964930618707520669 PSP 869.2 KB None None documents None 1407964930618707520669 /docs/en/data-sheet/A2T07D160W04S.pdf 869206 /docs/en/data-sheet/A2T07D160W04S.pdf A2T07D160W04S documents N N 2016-10-31 A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/A2T07D160W04S.pdf /docs/en/data-sheet/A2T07D160W04S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Aug 13, 2014 980000996212993340 Data Sheet Y N A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet 工程设计要点 Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 3 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L false 0 A2T07D160W04S downloads zh-Hans true 1 Y PSP Y Y 封装信息 1 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 3 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 数据手册 1 /docs/en/data-sheet/A2T07D160W04S.pdf 2016-10-31 1407964930618707520669 PSP 1 Aug 13, 2014 Data Sheet The A2T07D160W04SR3 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz. None /docs/en/data-sheet/A2T07D160W04S.pdf English documents 869206 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T07D160W04S.pdf A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet /docs/en/data-sheet/A2T07D160W04S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor - Data Sheet 869.2 KB A2T07D160W04S N 1407964930618707520669 true Y Products

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