A2T27S020N_400-2700MHz，2.5W平均值，28V | NXP 半导体

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技术

400-2700 MHz，2.5 W平均值，28 V Airfast®LDMOS射频功率晶体管

A2T27S020N 正常供应
A2T27S020NR1和A2T27S020GNR1 2.5 WLDMOS射频功率晶体管专为频率范围为400至2700MHz之间的移动通信基站应用而设计。

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产品详情

特性

  • 增大负栅源电压范围，改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 通用宽带驱动器
  • 符合RoHS规范

射频性能表

1800MHz

典型单载波W-CDMA性能：VDD = 28Vdc，IDQ = 185mA，平均输出功率 = 2.5W，输入信号PAR = 9.9dB @ 0.01% CCDF。(1)
频率 Gps
(dB)		 ηD
(%)		 输出PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
1805MHz20.820.99.4–44.6–9
1840MHz21.120.99.3–45.6–16
1880MHz20.720.69.1–45.5–13

2100MHz

典型单载波W-CDMA性能：VDD = 28Vdc，IDQ = 185mA，平均输出功率 = 2.5W，输入信号PAR = 9.9dB @ 0.01% CCDF。(1)
频率 Gps
(dB)		 ηD
(%)		 输出PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
2110MHz19.520.19.3–46.4–10
2140MHz19.819.89.0–45.0–13
2170MHz19.720.18.9–44.9–11

2600MHz

典型单载波W-CDMA性能：VDD = 28Vdc，IDQ = 185mA，平均输出功率 = 2.5W，输入信号PAR = 9.9dB @ 0.01% CCDF。(1)
频率 Gps
(dB)		 ηD
(%)		 输出PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
2575MHz17.620.39.3–44.2–8
2605MHz18.620.49.0–41.3–10
2635MHz18.020.18.6–40.7–6
1. 所有数据均在一个装置中测量，设备焊接到散热器上。

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N true 0 PSPA2T27S020Nzh 6 封装信息 Package Information t790 2 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 2 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 2 English A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Airfast <sup>&reg;</sup>, RF power LDMOS transistor for cellular base stations 1490337303645729746876 PSP 504.0 KB None None documents None 1490337303645729746876 /docs/en/data-sheet/A2T27S020N.pdf 503988 /docs/en/data-sheet/A2T27S020N.pdf A2T27S020N documents N N 2017-03-23 A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T27S020N.pdf /docs/en/data-sheet/A2T27S020N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 21, 2019 980000996212993340 Data Sheet Y N A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Data Sheet 应用笔记 Application Note 2 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 3 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 工程设计要点 Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 2 5 D English 98ASA99301D, 1265A-03, TO-270-2 Gull Wing 10hW9cFy PSP 86.0 KB None None documents None 10hW9cFy /docs/en/package-information/98ASA99301D.pdf 85976 /docs/en/package-information/98ASA99301D.pdf SOT1731-1 documents N N 2016-10-31 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf /docs/en/package-information/98ASA99301D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 30, 2016 302435339416912908 Package Information D N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 6 R English 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin Y1003179318854 PSP 91.2 KB None None documents None Y1003179318854 /docs/en/package-information/98ASH98117A.pdf 91219 /docs/en/package-information/98ASH98117A.pdf SOT1732-1 documents N N 2016-10-31 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf /docs/en/package-information/98ASH98117A.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 26, 2016 302435339416912908 Package Information D N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins false 0 A2T27S020N downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASA99301D.pdf 2016-10-31 10hW9cFy PSP 5 Mar 30, 2016 Package Information 98ASA99301D, 1265A-03, TO-270-2 Gull Wing None /docs/en/package-information/98ASA99301D.pdf English documents 85976 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA99301D.pdf 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins /docs/en/package-information/98ASA99301D.pdf documents 302435339416912908 Package Information N en None D pdf D N N 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins 86.0 KB SOT1731-1 N 10hW9cFy /docs/en/package-information/98ASH98117A.pdf 2016-10-31 Y1003179318854 PSP 6 Feb 26, 2016 Package Information 98ASH98117A, 1265-09, TO-270 Surface Mount, 3 Pin None /docs/en/package-information/98ASH98117A.pdf English documents 91219 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASH98117A.pdf 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins /docs/en/package-information/98ASH98117A.pdf documents 302435339416912908 Package Information N en None D pdf R N N 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins 91.2 KB SOT1732-1 N Y1003179318854 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 2 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 3 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 数据手册 1 /docs/en/data-sheet/A2T27S020N.pdf 2017-03-23 1490337303645729746876 PSP 1 Mar 21, 2019 Data Sheet A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Airfast <sup>&reg;</sup>, RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2T27S020N.pdf English documents 503988 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T27S020N.pdf A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T27S020N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N A2T27S020N 400-2700 MHz, 2.5 W Avg, 28 V Data Sheet 504.0 KB A2T27S020N N 1490337303645729746876 true Y Products

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封装信息 (2)
工程设计要点 (1)
应用笔记 (2)
数据手册 (1)

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