A2T21H100-25S_2110-2170 MHz，18 W，28 V | NXP 半导体

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2110-2170 MHz，18 W平均值，28 V Airfast® LDMOS射频功率晶体管

A2T21H100-25S 使用寿命终止
A2T21H100-25SR3 18 W非对称Doherty LDMOS射频功率晶体管专为2110到2170 MHz频率范围的移动通信基站应用而设计。

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特征

  • 先进的高性能内部封装Doherty
  • 增大负栅源电压范围，改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范

RF Performance Table

2100 MHz

典型Doherty单载波W-CDMA性能：VDD = 28 Vdc，IDQA = 250 mA，VGSB = 0.2 Vdc，平均输出功率 = 18 W，输入信号PAR = 9.9 dB @ 0.01% CCDF。
频率 Gps
(dB)		 ηD
(%)		 输出PAR
(dB)		 ACPR
(dBc)
2110 MHz17.352.18.2–32.4
2140 MHz17.451.08.0–33.1
2170 MHz17.450.58.0–35.0
N true 0 PSPA2T21H100-25Szh 3 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 1 English 18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz 1433220928470703827520 PSP 443.3 KB None None documents None 1433220928470703827520 /docs/en/data-sheet/A2T21H100-25S.pdf 443275 /docs/en/data-sheet/A2T21H100-25S.pdf A2T21H100-25S documents N N 2016-10-31 A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet /docs/en/data-sheet/A2T21H100-25S.pdf /docs/en/data-sheet/A2T21H100-25S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jan 26, 2022 980000996212993340 Data Sheet Y N A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet 工程设计要点 Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 3 A English 1362954192319715956460 PSP 56.1 KB None None documents None 1362954192319715956460 /docs/en/package-information/98ASA00406D.pdf 56071 /docs/en/package-information/98ASA00406D.pdf SOT1797-1 documents N N 2016-10-31 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins /docs/en/package-information/98ASA00406D.pdf /docs/en/package-information/98ASA00406D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins false 0 A2T21H100-25S downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASA00406D.pdf 2016-10-31 1362954192319715956460 PSP 3 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00406D.pdf English documents 56071 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00406D.pdf 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins /docs/en/package-information/98ASA00406D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins 56.1 KB SOT1797-1 N 1362954192319715956460 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 数据手册 1 /docs/en/data-sheet/A2T21H100-25S.pdf 2016-10-31 1433220928470703827520 PSP 1 Jan 26, 2022 Data Sheet 18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz None /docs/en/data-sheet/A2T21H100-25S.pdf English documents 443275 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T21H100-25S.pdf A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet /docs/en/data-sheet/A2T21H100-25S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet 443.3 KB A2T21H100-25S N 1433220928470703827520 true Y Products

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