A2T14H450-23N_1452-1511 MHz, 93 W平均值, 31 V | NXP 半导体

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1452-1511 MHz, 93 W平均值, 31 V Airfast®LDMOS射频功率晶体管

A2T14H450-23N 建议不要在新设计中使用该软件
A2T14H450-23NR6 93 W对称Doherty LDMOS射频功率晶体管专为1452至1511MHz频率范围的移动通信基站应用而设计。

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产品详情

特征

  • 先进的高性能内部封装Doherty
  • 增大负栅源电压范围，改善C类放大器运行
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范

射频性能表

1500 MHz

典型Doherty单载波W-CDMA性能：VDD = 31 Vdc， IDQA = 1000 mA，VGSB = 0.5 Vdc，平均输出功率 = 93 W，输入信号PAR = 9.9 dB @ 0.01% CCDF。
频率 Gps
(dB)		 ηD
(%)		 输出PAR
(dB)		 ACPR
(dBc)
1452 MHz18.848.28.1–38.2
1480 MHz19.048.07.9–39.2
1511 MHz19.048.77.7–38.6
N true 0 PSPA2T14H450-23Nzh 6 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 3 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English A2T14H450-23N 1427-1517 MHz, 93 W Avg, 31 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1485763242205710435188 PSP 389.2 KB None None documents None 1485763242205710435188 /docs/en/data-sheet/A2T14H450-23N.pdf 389243 /docs/en/data-sheet/A2T14H450-23N.pdf A2T14H450-23N documents N N 2017-01-30 A2T14H450-23N 1427-1517 MHz, 93 W Avg, 31 V Data Sheet /docs/en/data-sheet/A2T14H450-23N.pdf /docs/en/data-sheet/A2T14H450-23N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Nov 14, 2022 980000996212993340 Data Sheet Y N A2T14H450-23N 1427-1517 MHz, 93 W Avg, 31 V Data Sheet 应用笔记 Application Note 3 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 工程设计要点 Technical Notes 1 5 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 6 A English OM-1230-4L2S 1458194636779707286560 PSP 90.3 KB None None documents None 1458194636779707286560 /docs/en/package-information/98ASA00885D.pdf 90330 /docs/en/package-information/98ASA00885D.pdf SOT1819-2 documents N N 2016-10-31 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins /docs/en/package-information/98ASA00885D.pdf /docs/en/package-information/98ASA00885D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 14, 2016 302435339416912908 Package Information D N 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins false 0 A2T14H450-23N downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASA00885D.pdf 2016-10-31 1458194636779707286560 PSP 6 Mar 14, 2016 Package Information OM-1230-4L2S None /docs/en/package-information/98ASA00885D.pdf English documents 90330 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00885D.pdf 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins /docs/en/package-information/98ASA00885D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00885D, OMNI, 32.26x9.96x3.81, Pitch 13.72, 7 Pins 90.3 KB SOT1819-2 N 1458194636779707286560 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 5 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 3 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 4 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 数据手册 1 /docs/en/data-sheet/A2T14H450-23N.pdf 2017-01-30 1485763242205710435188 PSP 1 Nov 14, 2022 Data Sheet A2T14H450-23N 1427-1517 MHz, 93 W Avg, 31 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2T14H450-23N.pdf English documents 389243 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T14H450-23N.pdf A2T14H450-23N 1427-1517 MHz, 93 W Avg, 31 V Data Sheet /docs/en/data-sheet/A2T14H450-23N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A2T14H450-23N 1427-1517 MHz, 93 W Avg, 31 V Data Sheet 389.2 KB A2T14H450-23N N 1485763242205710435188 true Y Products

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数据手册 (1)

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