MRFX600H 产品信息|NXP

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技术

MRFX600H

不推荐用于新设计

MRFX600H

不推荐用于新设计

特点

Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V

  • 数据手册:
  • PDF

封装

CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 9.78 mm x 34.04 mm x 3.75 mm body

购买选项

MRFX600HR5

不推荐用于新设计

12NC: 935376369178

详细信息

  • 包装: REEL-Reel 13" Q2/T3 in SmallPack
  • 最小封装数量: 50
  • 起订量: 50
  • 交付周期: 10 weeks

订购

从分销商处购买

工作特点

参数值
fi(RF) [max] (MHz)
400
Number of pins
4
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
65
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.15
P1dB (Typ) (dBm)
57.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 400
Efficiency (Typ) (%)
74.4
Frequency Band (Hz)
1800000, 400000000
参数值
Description
Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
fi(RF) [min] (MHz)
1.8
P1dB (Typ) (W)
600
Gain (Typ) (dB)
26.4
Power Gain (Typ) (dB) @ f (MHz)
26.4 @ 230
Frequency (Max) (MHz)
400
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.4
frange [max] (MHz)
400
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.15
Matching
unmatched
Modes of Operation
pulsed radio frequency signal

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标REACH SVHC重量（mg）
MRFX600HR5(935376369178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
6395.8

质量

部件/12NC安全保障功能安全封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
MRFX600HR5
(935376369178)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MRFX600HR5
(935376369178)
854129
EAR99

更多信息 MRFX600H

The MRFX600H, MRFX600HS and MRFX600GS high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.