MRFE8VP8600H 产品信息|NXP

MRFE8VP8600H

不推荐用于新设计

MRFE8VP8600H

不推荐用于新设计

购买选项

MRFE8VP8600HR5

不推荐用于新设计

12NC: 935318365178

详细信息

订购

从分销商处购买

工作特点

参数
fi(RF) [max] (MHz)
860
Number of pins
4
Package Style
CFM
Amp Class
AB
Test Signal
OFDM
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.16
P1dB (Typ) (dBm)
59
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
470, 860
Efficiency (Typ) (%)
34
Peak Power (Typ) (W)
925
Frequency Band (Hz)
470000000, 860000000
参数
Description
140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
fi(RF) [min] (MHz)
470
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
140 @ AVG
P1dB (Typ) (W)
800
Gain (Typ) (dB)
20
Power Gain (Typ) (dB) @ f (MHz)
20 @ 810
Frequency (Max) (MHz)
860
Frequency (Min) (MHz)
470
Frequency (Min-Max) (GHz)
0.47 to 0.86
frange [max] (MHz)
860
frange [min] (MHz)
470
Rth(j-a) (K/W)
0.16
Matching
input impedance matching
Modes of Operation
orthogonal frequency division multiplexing
Peak Power (Typ) (dBm)
59.7

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
MRFE8VP8600HR5(935318365178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
13163.9

质量

部件/12NC安全保障功能安全封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
MRFE8VP8600HR5
(935318365178)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MRFE8VP8600HR5
(935318365178)
854129
EAR99

更多信息 MRFE8VP8600H

The MRFE8VP8600H and MRFE8VP8600HS high power transistors are designed for use in UHF TV broadcast applications. The devices have an integrated input matching network for better power distribution and are ideal for use in both analog and digital TV transmitters.