MRFE6VP5150GN 产品信息|NXP

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技术

MRFE6VP5150GN

不推荐用于新设计

MRFE6VP5150GN

不推荐用于新设计

特点

WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V

  • 数据手册:
  • PDF

封装

FM4F: FM4F, plastic, flange mount flat package; 4 terminals; 9.02 mm x 17.53 mm x 2.59 mm body

购买选项

MRFE6VP5150GNR1

不推荐用于新设计

12NC: 935320449528

详细信息

  • 包装: REEL-Reel 13" Q2/T3 in Drypack
  • 最小封装数量: 500
  • 起订量: 500
  • 交付周期: 10 weeks

订购

从分销商处购买

工作特点

参数值
fi(RF) [max] (MHz)
600
Number of pins
4
Package Style
DFM
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.21
P1dB (Typ) (dBm)
51.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 600
Efficiency (Typ) (%)
72
Peak Power (Typ) (W)
180
Frequency Band (Hz)
1800000, 600000000
参数值
Description
WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
150 @ CW
P1dB (Typ) (W)
150
Gain (Typ) (dB)
26.3
Power Gain (Typ) (dB) @ f (MHz)
26.3 @ 230
Frequency (Max) (MHz)
600
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.6
frange [max] (MHz)
600
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.21
Matching
unmatched
Modes of Operation
continuous wave

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量（mg）
MRFE6VP5150GNR1(935320449528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
1634.8

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
MRFE6VP5150GNR1
(935320449528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MRFE6VP5150GNR1
(935320449528)
854129
EAR99

更多信息 MRFE6VP5150N

These high ruggedness devices, MRFE6VP5150NR1 and MRFE6VP5150GNR1, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.