MMRF1314H 产品信息|NXP

MMRF1314H

正常供应

MMRF1314H

正常供应

特点


RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V

封装


CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 13.72 mm pitch, 10.16 mm x 41.15 mm x 4.575 mm body

购买选项

No items available

工作特点

参数
fi(RF) [max] (MHz)
1400
Number of pins
4
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
52
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.018000001
P1dB (Typ) (dBm)
60
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1200, 1400
Efficiency (Typ) (%)
46.5
Peak Power (Typ) (W)
1600
Frequency Band (Hz)
1200000000, 1400000000
参数
Description
RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V
fi(RF) [min] (MHz)
1200
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1000 @ Peak
P1dB (Typ) (W)
1000
Gain (Typ) (dB)
15.5
Power Gain (Typ) (dB) @ f (MHz)
15.5 @ 1200
Frequency (Max) (MHz)
1400
Frequency (Min) (MHz)
1200
Frequency (Min-Max) (GHz)
1.2 to 1.4000001
frange [max] (MHz)
1400
frange [min] (MHz)
1200
Rth(j-a) (K/W)
0.018000001
Matching
input and output impedance matching
Modes of Operation
pulsed radio frequency signal

环境

无相关信息

质量

无相关信息

配送

无相关信息

更多信息 MMRF1314H

These RF power devices, MMRF1314H, MMRF1314HS and MMRF1314GS, are designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The devices are suitable for use in pulse applications and are ideal for use in high power military and commercial L-Band radar applications.