1805-2200 MHz, 56 W Avg., 48 V Airfast® RF Power LDMOS Transistor
This A3G18D510-04S 56 W symmetrical Doherty RF Power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1805 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-780S-4L Package Image
产品详情
Features
- High terminal impedances for optimal broadband performance
- Advanced high performance in-package Doherty
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- RoHs compliant
部件编号包含： A3G18D510-04S.
RF Performance Tables
2000 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 250 mA, VGSB = –5.0 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1805 MHz | 16.0 | 54.3 | 8.0 | –26.4 |
| 1995 MHz | 16.8 | 52.2 | 7.8 | –31.9 |
| 2170 MHz | 15.4 | 53.9 | 7.6 | –33.8 |
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