A3T21H455W23S_2110-2200 MHz, 87 W Avg, 30 V | NXP 半导体

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2110-2200 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor

A3T21H455W23S 使用寿命终止
The A3T21H455W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.

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Features

  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 30 Vdc, IDQA = 400 mA, VGSB = 0.55 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2110 MHz15.247.88.1–31.4
2140 MHz15.547.97.8–31.2
2170 MHz15.448.87.7–30.7
2200 MHz15.049.47.6–30.8

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