1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

The MRF7S18170HR3 and MRF7S18170HSR3 are designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

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Typical Single–Carrier W–CDMA Performance: V_DD = 28 Volts, I_DQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Power Gain: 17.5 dB

Drain Efficiency: 31%

Device Output Signal PAR: 6.2 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW Peak Tuned Output Power
Pout @ 1 dB Compression Point ≥ 170 Watts CW
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

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3 文件

^数据手册
MRF7S18170HR3, MRF7S18170HSR3 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

PDF版本 2Mar 31, 2011956.8 KBMRF7S18170HEnglish
^封装信息
98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins

PDF版本 FMar 1, 201641.4 KBSOT1789-1English
^封装信息
98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins

PDF版本 GFeb 4, 201647.3 KBSOT1788-1English

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5 设计文件

^模型
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^模型
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTML版本 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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^模型
MRF7S18170H, MRF7S18170HS RF High-Power Model ADS Product Model Design Kit

ZIP版本 2Jun 17, 2019 00:00:00158.7 KBMRF7S18170H_MDL_ADS
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MRF7S18170H, MRF7S18170HS RF High-Power Model AWR Product Model Design Kit

ZIP版本 0Jul 22, 2011 00:00:00134.4 KBMRF7S18170H_MDL_AWR
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^计算器
MRF7S18170HR3, MRF7S18170HSR3 RF Power Electromigration MTTF Calculation Program

XLS版本 1Aug 1, 2007 00:00:0044.0 KBMRF7S18170H_MTTF_CALC
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1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

产品详情

特征

文档

过滤方式

MRF7S18170HR3, MRF7S18170HSR3 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins

98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins

设计资源

设计文件

过滤方式

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF7S18170H, MRF7S18170HS RF High-Power Model ADS Product Model Design Kit

MRF7S18170H, MRF7S18170HS RF High-Power Model AWR Product Model Design Kit

MRF7S18170HR3, MRF7S18170HSR3 RF Power Electromigration MTTF Calculation Program

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