A3G22H400-04S_Airfast RF Power GaN Transistor

A3G22H400-04S_Airfast RF Power GaN Transistor | NXP 半导体

The A3G22H400-04S 79 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1800 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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数据手册

应用笔记

产品详情

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Able to withstand extremely high output VSWR and broadband operating conditions
RoHS compliant

RF Performance Tables

2100 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: V_DD = 48 Vdc, I_DQA = 200 mA, V_GSB = –5.4 Vdc, P_out = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	15.4	56.6	7.1	–33.1
2140 MHz	15.4	56.6	7.1	–34.9
2170 MHz	15.4	56.6	7.1	–34.9
2200 MHz	15.3	56.5	7.0	–34.5

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 200 mA, V_GSB = –5.5 Vdc, P_out = 89 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
1805 MHz	15.1	56.0	7.0	–31.1
1840 MHz	15.6	56.5	7.1	–31.8
1880 MHz	15.1	58.7	7.0	–30.8

1. All data measured in fixture with device soldered to heatsink.

购买/参数

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设计资源

设计文件

快速参考恩智浦设计文件类型.

4 设计文件

模型
A3G22H400-04S Peaking Class C S-Parameters

S2P版本 0May 28, 2018119.4 KBA3G22H400-04S-Peaking-Class-C

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模型
A3G22H400-04S Peaking Class AB S-Parameters

S2P版本 0May 28, 2018119.4 KBA3G22H400-04S-Peaking-Class-AB

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模型
A3G22H400-04S Carrier S-Parameters

S2P版本 0May 28, 2018119.4 KBA3G22H400-04S-Carrier

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印刷电路板与电路图
A3G22H400-04S 2100 MHz PCB DXF file

ZIP版本 7May 22, 2018122.8 KBA3G22H400-04S-2100-PCB

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购物车

1800-2200 MHz, 79 W Avg., 48 V Airfast® RF Power GaN Transistor

产品详情

Features

RF Performance Tables

2100 MHz

1800 MHz

购买/参数

文档

过滤方式

封装信息 (1)

NI-780S-4L[98ASA10718D]

应用笔记 (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

数据手册 (1)

A3G22H400-04S 1800-2200 MHz, 79 W Avg, 48 V GaN Data Sheet[A3G22H400-04S]

过滤方式

封装信息 (1)

NI-780S-4L[98ASA10718D]

应用笔记 (1)

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages[AN1908]

数据手册 (1)

A3G22H400-04S 1800-2200 MHz, 79 W Avg, 48 V GaN Data Sheet[A3G22H400-04S]

设计资源

设计文件

过滤方式

A3G22H400-04S Peaking Class C S-Parameters

A3G22H400-04S Peaking Class AB S-Parameters

A3G22H400-04S Carrier S-Parameters

A3G22H400-04S 2100 MHz PCB DXF file

过滤方式

筛选条件

A3G22H400-04S Peaking Class C S-Parameters

A3G22H400-04S Peaking Class AB S-Parameters

A3G22H400-04S Carrier S-Parameters

A3G22H400-04S 2100 MHz PCB DXF file

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1800-2200 MHz, 79 W Avg., 48 V Airfast^® RF Power GaN Transistor