1800-2200 MHz, 79 W Avg., 48 V Airfast® RF Power GaN Transistor
The A3G22H400-04S 79 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1800 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-780S-4L Package Image
产品详情
Features
- High terminal impedances for optimal broadband performance
- Advanced high performance in-package Doherty
- Able to withstand extremely high output VSWR and broadband operating conditions
- RoHS compliant
RF Performance Tables
2100 MHz
Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQA = 200 mA, VGSB = –5.4 Vdc, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2110 MHz | 15.4 | 56.6 | 7.1 | –33.1 |
| 2140 MHz | 15.4 | 56.6 | 7.1 | –34.9 |
| 2170 MHz | 15.4 | 56.6 | 7.1 | –34.9 |
| 2200 MHz | 15.3 | 56.5 | 7.0 | –34.5 |
1800 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 200 mA, VGSB = –5.5 Vdc, Pout = 89 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1805 MHz | 15.1 | 56.0 | 7.0 | –31.1 |
| 1840 MHz | 15.6 | 56.5 | 7.1 | –31.8 |
| 1880 MHz | 15.1 | 58.7 | 7.0 | –30.8 |
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