2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

MRF7S21110H
The MRF7S21110HR3 and MRF7S21110HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

查看产品图片

产品详情

特征

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 33 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 17.3 dB
    Drain Efficiency: 32.5%
    Device Output Signal PAR:  6.1 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW Peak Tuned Output Power
  • Pout @ 1 dB Compression Point ≥ 110 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

文档

快速参考恩智浦 文档类别.

筛选条件

3 文件

设计文件

快速参考恩智浦 设计文件类型.
筛选条件

4 设计文件

支持

您需要什么帮助?

  • Narrow your search
搜索