MW7IC008N 产品信息|NXP

MW7IC008N

不推荐用于新设计

MW7IC008N

不推荐用于新设计

特点


RF LDMOS Wideband Integrated Power Amplifier, 100-1000 MHz, 8 W Peak, 28 V

封装


HQFN24: HQFN24, plastic, thermal enhanced quad flatpack; no leads; 24 terminals; 0.8 mm pitch; 8 mm x 8 mm x 2.1 mm body

购买选项

MW7IC008NT1

不推荐用于新设计

12NC: 935314113528

详细信息

订购

从分销商处购买

工作特点

参数
fi(RF) [max] (MHz)
1000
Number of pins
24
Package Style
HQFN
Amp Class
AB
Test Signal
1-TONE
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
3.2
P1dB (Typ) (dBm)
38.1
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
100, 1000
Efficiency (Typ) (%)
34
Frequency Band (Hz)
100000000, 1000000000
参数
Description
RF LDMOS Wideband Integrated Power Amplifier, 100-1000 MHz, 8 W Peak, 28 V
fi(RF) [min] (MHz)
100
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
6.5 @ CW
P1dB (Typ) (W)
6.5
Gain (Typ) (dB)
23.5
Power Gain (Typ) (dB) @ f (MHz)
23.5 @ 900
Frequency (Max) (MHz)
1000
Frequency (Min) (MHz)
100
Frequency (Min-Max) (GHz)
0.1 to 1
frange [max] (MHz)
1000
frange [min] (MHz)
100
Rth(j-a) (K/W)
3.2
Matching
input and output impedance matching
Modes of Operation
single-tone modulation

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
MW7IC008NT1(935314113528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
399.6

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
MW7IC008NT1
(935314113528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MW7IC008NT1
(935314113528)
854129
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
MW7IC008NT1
(935314113528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

更多信息 MW7IC008N

The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers most narrow bandwidth communication application formats.