960-1215 MHz，275 W，50 V脉冲射频功率LDMOS | NXP 半导体

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960-1215 MHz，275 W，50 V脉冲射频功率LDMOS

MRF6V12250H
不推荐用于新设计
MRF6V12250HR3和MRF6V12250HSR3射频功率晶体管专为960至1215MHz频率范围的应用而设计。这些器件适用于脉冲应用。

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特征

  • 典型脉冲性能：VDD = 50 V，IDQ = 100 mA，输出功率 = 275 W峰值(27.5 W平均值)， f = 1030 MHz，脉冲宽度 = 128 µsec，占空比 = 10%
    功率增益：20.3 dB
    漏极效率：65.5%
  • 在50 Vdc，1030 MHz，275 W峰值功率时，能承受10:1 VSWR
  • 典型宽带性能：VDD = 50 V，IDQ = 100 mA，输出功率 = 250 W峰值(25 W平均值)，f = 960–1215 MHz，脉冲宽度 = 128 µsec，占空比 = 10%
    功率增益：19.8 dB
    漏极效率：58%
  • 提供串联等效大信号阻抗参数
  • 内部匹配，简便易用
  • 工作电压最高可达50 VDD
  • 集成的ESD保护
  • 增大负栅源电压范围，改善C类放大器运行
  • 符合RoHS规范
  • 采用盘卷包装。R3后缀 = 250个，56 mm卷带宽度，13英寸卷盘
  • 这些产品包含在恩智浦产品长期供货计划中，自推出后至少保证10年供货。
N true 0 PSPMRF6V12250Hzh 7 封装信息 Package Information t790 2 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 1 手册 Brochure t518 1 数据手册 Data Sheet t520 1 白皮书 White Paper t530 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 2 English RF Power transistor designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications. 1243893750600704961724 PSP 1.3 MB None None documents None 1243893750600704961724 /docs/en/data-sheet/MRF6V12250H.pdf 1304598 /docs/en/data-sheet/MRF6V12250H.pdf MRF6V12250H documents N N 2016-10-31 MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF6V12250H.pdf /docs/en/data-sheet/MRF6V12250H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Apr 28, 2010 980000996212993340 Data Sheet Y N MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs 应用笔记 Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 手册 Brochure 1 3 2 English Comprehensive portfolio of RF power transistors for commercial aerospace applications. 1243895030259713217473 PSP 1.9 MB None None documents None 1243895030259713217473 /docs/en/brochure/BR1608.pdf 1872765 /docs/en/brochure/BR1608.pdf BR1608 documents N N 2016-10-31 RF Solutions for Commercial Aerospace /docs/en/brochure/BR1608.pdf /docs/en/brochure/BR1608.pdf Brochure N 712453003803778552 2024-03-13 pdf N en Sep 4, 2015 712453003803778552 Brochure Y N RF Solutions for Commercial Aerospace 工程设计要点 Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 2 5 H English NI-780 U1003176831092 PSP 44.1 KB None None documents None U1003176831092 /docs/en/package-information/98ASB15607C.pdf 44100 /docs/en/package-information/98ASB15607C.pdf SOT1792-1 documents N N 2016-10-31 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf /docs/en/package-information/98ASB15607C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins 6 J English NI-780S, 465A-06 E1003176922206 PSP 43.5 KB None None documents None E1003176922206 /docs/en/package-information/98ASB16718C.pdf 43526 /docs/en/package-information/98ASB16718C.pdf SOT1793-1 documents N N 2016-10-31 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf /docs/en/package-information/98ASB16718C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins 白皮书 White Paper 1 7 4 English In-depth view of Our latest advancements in RF Power LDMOS at 50 Volts, with a focus on technology comparisons, ruggedness enhancements and specifics of the design - RF performance, thermal characteristics, device impedances and device models. 1221085238616699797555 PSP 965.1 KB None None documents None 1221085238616699797555 /docs/en/white-paper/50VRFLDMOSWP.pdf 965097 /docs/en/white-paper/50VRFLDMOSWP.pdf 50VRFLDMOSWP documents N N 2016-10-31 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications /docs/en/white-paper/50VRFLDMOSWP.pdf /docs/en/white-paper/50VRFLDMOSWP.pdf White Paper N 918633085541740938 2022-12-07 pdf N en Sep 8, 2011 918633085541740938 White Paper Y N 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications false 0 MRF6V12250H downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASB15607C.pdf 2016-10-31 U1003176831092 PSP 5 Mar 22, 2016 Package Information NI-780 None /docs/en/package-information/98ASB15607C.pdf English documents 44100 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB15607C.pdf 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins 44.1 KB SOT1792-1 N U1003176831092 /docs/en/package-information/98ASB16718C.pdf 2016-10-31 E1003176922206 PSP 6 Mar 22, 2016 Package Information NI-780S, 465A-06 None /docs/en/package-information/98ASB16718C.pdf English documents 43526 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16718C.pdf 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf documents 302435339416912908 Package Information N en None D pdf J N N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins 43.5 KB SOT1793-1 N E1003176922206 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 手册 1 /docs/en/brochure/BR1608.pdf 2016-10-31 1243895030259713217473 PSP 3 Sep 4, 2015 Brochure Comprehensive portfolio of RF power transistors for commercial aerospace applications. None /docs/en/brochure/BR1608.pdf English documents 1872765 None 712453003803778552 2024-03-13 N /docs/en/brochure/BR1608.pdf RF Solutions for Commercial Aerospace /docs/en/brochure/BR1608.pdf documents 712453003803778552 Brochure N en None Y pdf 2 N N RF Solutions for Commercial Aerospace 1.9 MB BR1608 N 1243895030259713217473 数据手册 1 /docs/en/data-sheet/MRF6V12250H.pdf 2016-10-31 1243893750600704961724 PSP 1 Apr 28, 2010 Data Sheet RF Power transistor designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications. None /docs/en/data-sheet/MRF6V12250H.pdf English documents 1304598 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF6V12250H.pdf MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF6V12250H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs 1.3 MB MRF6V12250H N 1243893750600704961724 白皮书 1 /docs/en/white-paper/50VRFLDMOSWP.pdf 2016-10-31 1221085238616699797555 PSP 7 Sep 8, 2011 White Paper In-depth view of Our latest advancements in RF Power LDMOS at 50 Volts, with a focus on technology comparisons, ruggedness enhancements and specifics of the design - RF performance, thermal characteristics, device impedances and device models. None /docs/en/white-paper/50VRFLDMOSWP.pdf English documents 965097 None 918633085541740938 2022-12-07 N /docs/en/white-paper/50VRFLDMOSWP.pdf 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications /docs/en/white-paper/50VRFLDMOSWP.pdf documents 918633085541740938 White Paper N en None Y pdf 4 N N 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications 965.1 KB 50VRFLDMOSWP N 1221085238616699797555 true Y Products

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