A3T18H360W23S_1805-1880 MHz，63 W平均值，28 V | NXP 半导体

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1805-1880 MHz，63 W平均值，28 V Airfast®LDMOS射频功率晶体管

A3T18H360W23S
使用寿命终止
A3T18H360W23S 63 W非对称Doherty LDMOS射频功率晶体管面向需要极高瞬时带宽的1805到1880 MHz移动通信基站应用。

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特征

  • 先进的高性能内部封装Doherty
  • 专为宽瞬时带宽应用而设计
  • 增大负栅源电压范围，改善C类放大器运行
  • 可承受极高的输出VSWR和宽带运行条件
  • 专为数字预失真纠错系统而设计
  • 符合RoHS规范

射频性能表

1800 MHz

典型Doherty单载波W-CDMA性能：VDD = 28 Vdc，IDQA = 700 mA，VGSB = 0.6 Vdc，平均输出功率 = 63 W，输入信号PAR = 9.9 dB @ 0.01% CCDF。
频率 Gps
(dB)		 ηD
(%)		 输出PAR
(dB)		 ACPR
(dBc)
1805 MHz16.352.87.7–30.3
1840 MHz16.652.37.6–31.7
1880 MHz16.651.67.5–32.8
N true 0 PSPA3T18H360W23Szh 4 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1496123925756718184802 PSP 792.9 KB None None documents None 1496123925756718184802 /docs/en/data-sheet/A3T18H360W23S.pdf 792935 /docs/en/data-sheet/A3T18H360W23S.pdf A3T18H360W23S documents N N 2017-05-29 A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Data Sheet /docs/en/data-sheet/A3T18H360W23S.pdf /docs/en/data-sheet/A3T18H360W23S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jun 28, 2017 980000996212993340 Data Sheet Y N A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Data Sheet 应用笔记 Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 工程设计要点 Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 4 A English ACP-1230S-4L2S 1497055960367704905016 PSP 73.9 KB None None documents None 1497055960367704905016 /docs/en/package-information/98ASA00974D.pdf 73913 /docs/en/package-information/98ASA00974D.pdf SOT1800-4 documents N N 2017-06-09 98ASA00974D, ACP-1230S-4L2S /docs/en/package-information/98ASA00974D.pdf /docs/en/package-information/98ASA00974D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jun 21, 2017 302435339416912908 Package Information D N 98ASA00974D, ACP-1230S-4L2S false 0 A3T18H360W23S downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASA00974D.pdf 2017-06-09 1497055960367704905016 PSP 4 Jun 21, 2017 Package Information ACP-1230S-4L2S None /docs/en/package-information/98ASA00974D.pdf English documents 73913 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00974D.pdf 98ASA00974D, ACP-1230S-4L2S /docs/en/package-information/98ASA00974D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00974D, ACP-1230S-4L2S 73.9 KB SOT1800-4 N 1497055960367704905016 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 数据手册 1 /docs/en/data-sheet/A3T18H360W23S.pdf 2017-05-29 1496123925756718184802 PSP 1 Jun 28, 2017 Data Sheet A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A3T18H360W23S.pdf English documents 792935 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3T18H360W23S.pdf A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Data Sheet /docs/en/data-sheet/A3T18H360W23S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A3T18H360W23S 1805-1880 MHz, 63 W Avg, 28 V Data Sheet 792.9 KB A3T18H360W23S N 1496123925756718184802 true Y Products

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