AFM907N_8 W连续波，136-941MHz，7.5V | NXP 半导体

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技术

8W连续波，136-941MHz，7.5V Airfast® LDMOS宽带射频功率晶体管

AFM907N
不推荐用于新设计
AFM907N专为频率范围在136至941MHz之间的手持双向对讲机应用而设计。这些器件具有高增益、耐用性、宽带性能，适用于手持对讲机设备中的大信号、共源放大器应用。

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产品详情

特性

  • 运行频率在136到941MHz之间
  • 未匹配的输入和输出，可适用更宽的频率范围
  • 集成的ESD保护
  • 集成的稳定性增强功能
  • 宽带 - 整个频段全功率
  • 卓越的热性能
  • 非常耐用
  • 高线性度：TETRA、SSB
  • 符合RoHS规范
  • 输出级VHF频段手持对讲机
  • 输出级UHF频段手持对讲机
  • 输出级700-800 MHz手持对讲机

射频性能表

宽带性能

（在350-520MHz参考电路，7.5Vdc，TA = 25°C，连续波）
频率
(MHz)(1)		 输入功率
(W)		 Gps
(dB)		 ηD
(%)		 输出功率
(W)
3500.2515.256.68.4
4350.2515.561.58.9
5200.2515.064.27.9

窄带性能

（7.5Vdc，TA = 25°C，连续波）
频率
(MHz)		 Gps
(dB)		 ηD
(%)		 输出功率
(W)
520(2)20.773.98.4

负载不匹配/耐用性

频率
(MHz)		 信号类型 VSWR 输入功率
(dBm)		 测试
电压		 结果
520(2) 连续波 >65:1所有相角 21
（3dB过驱）		 10.8 无器件退化
1. 在350-520MHz UHF宽带参考电路中测量。
2. 在520MHz窄带射频测试装置中测量。

购买/参数

1 结果

不包含 1 不推荐用于新设计

部件

展开描述

订购

计算机辅助设计模型

状态

AFM907N
数据手册

建议不要在新设计中使用该软件

N true 0 PSPAFM907Nzh 5 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 2 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English AFM907N 8 W over 136-941 MHz, 7.5 V high gain, rugged Airfast<sup>&reg;</sup> RF power LDMOS transistor for handheld radio equipment 1492773813372726874420 PSP 1.6 MB None None documents None 1492773813372726874420 /docs/en/data-sheet/AFM907N.pdf 1579672 /docs/en/data-sheet/AFM907N.pdf AFM907N documents N N 2017-04-21 AFM907N 8 W over 136-941 MHz, 7.5 V Data Sheet /docs/en/data-sheet/AFM907N.pdf /docs/en/data-sheet/AFM907N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 28, 2019 980000996212993340 Data Sheet Y N AFM907N 8 W over 136-941 MHz, 7.5 V Data Sheet 应用笔记 Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 工程设计要点 Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 5 B English 1472460122444712310725 PSP 51.9 KB None None documents None 1472460122444712310725 /docs/en/package-information/98ASA00868D.pdf 51876 /docs/en/package-information/98ASA00868D.pdf SOT1862-1 documents N N 2016-11-09 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins /docs/en/package-information/98ASA00868D.pdf /docs/en/package-information/98ASA00868D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jul 27, 2016 302435339416912908 Package Information D N 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins false 0 AFM907N downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASA00868D.pdf 2016-11-09 1472460122444712310725 PSP 5 Jul 27, 2016 Package Information None /docs/en/package-information/98ASA00868D.pdf English documents 51876 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00868D.pdf 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins /docs/en/package-information/98ASA00868D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins 51.9 KB SOT1862-1 N 1472460122444712310725 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 数据手册 1 /docs/en/data-sheet/AFM907N.pdf 2017-04-21 1492773813372726874420 PSP 1 May 28, 2019 Data Sheet AFM907N 8 W over 136-941 MHz, 7.5 V high gain, rugged Airfast<sup>&reg;</sup> RF power LDMOS transistor for handheld radio equipment None /docs/en/data-sheet/AFM907N.pdf English documents 1579672 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFM907N.pdf AFM907N 8 W over 136-941 MHz, 7.5 V Data Sheet /docs/en/data-sheet/AFM907N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N AFM907N 8 W over 136-941 MHz, 7.5 V Data Sheet 1.6 MB AFM907N N 1492773813372726874420 true Y Products

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工程设计要点 (1)
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数据手册 (1)

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