MRFX1K80H_1800 W连续波, 1.8-400 MHz, 65 V | NXP 半导体

安全互联汽车

工业

消费电子

技术

1800 W连续波，1.8-400 MHz，65 V LDMOS宽带射频功率晶体管

MRFX1K80H
正常供应

滚动图片以放大

MRFX1K80H是基于恩智浦新的65 V LDMOS技术的首款器件，注重易用性。高度耐用的晶体管，适用于高VSWR工业、科学和医疗应用，以及电台和VHF电视广播、sub-GHz航空航天和移动无线电应用。此器件采用输入和输出未匹配设计，支持1.8-400 MHz的更宽频率范围。

MRFX1K80H与其塑料版本MRFX1K80N、MRFE6VP61K25H和MRFE6VP61K25N (1250 W @ 50 V)，以及MRF1K50H和MRF1K50N (1500 W @ 50 V)引脚兼容(同一PCB)。

产品详情

特征

  • 基于新的65 V LDMOS技术，设计实现易用性
  • 特征参数取样自30 V至65 V，适用于更宽的功率范围
  • 非匹配的输入和输出
  • 高击穿电压可增强可靠性和更高效的架构
  • 高漏极源雪崩能量吸收能力
  • 高度耐用。处理65:1 VSWR。
  • 符合RoHS规范
  • 超模压塑封中的低热阻选件：MRFX1K80N
  • 包含在产品长期供货计划中，自推出后至少保证15年供货
  • 工业、科学和医疗(ISM)
    • 激光生成
    • 等离子生成
    • 粒子加速器
    • MRI、射频消融和皮肤治疗
    • 工业加热、焊接和干燥系统
  • 电台和VHF电视广播
  • 航空航天
    • VHF全向信标(VOR)
    • HF通信
    • 气象雷达

射频性能表

典型性能

频率
(MHz)		 信号类型 VDD
(V)		 输出功率
(W)		 Gps
(dB)		 ηD
(%)
27 (1)连续波651800连续波27.875.6
64脉冲(100 µsec，10%占空比)651800峰值27.169.5
81.36连续波631700连续波24.576.3
87.5-108 (2,3)连续波601600连续波23.682.5
123/128脉冲(100 µsec，10%占空比)651800峰值25.969.0
144连续波651800连续波23.578.0
230 (4)脉冲(100 µsec，20%占空比)651800峰值25.175.1
325脉冲(12 µsec，10%占空比)631700峰值22.864.9

负载不匹配/耐用性

频率
(MHz)		 信号类型 VSWR 输入功率
(W)		 测试电压 结果
230 (4) 脉冲
(100 µsec，20%占空比)		 > 65:1所有相角 14W峰值
(3 dB过驱)		 65 无器件退化
1. 数据来自27 MHz窄带参考电路。
2. 数据来自87.5-108 MHz宽带参考电路。
3. 显示的数值为指定频率范围内的中心频带性能数。
4. 数据来自230 MHz的窄带生产测试装置。

购买/参数

‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
‌
‌

‌
‌
‌
‌
‌
‌
N true 0 PSPMRFX1K80Hzh 5 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 2 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English MRFX1K80H 1800 W CW over 1.8-400 MHz, 65 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications 1504029214784719618290 PSP 1.2 MB None None documents None 1504029214784719618290 /docs/en/data-sheet/MRFX1K80H.pdf 1228319 /docs/en/data-sheet/MRFX1K80H.pdf MRFX1K80H documents N N 2017-08-29 MRFX1K80H 1800 W CW, 1.8-400 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX1K80H.pdf /docs/en/data-sheet/MRFX1K80H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Sep 26, 2018 980000996212993340 Data Sheet Y N MRFX1K80H 1800 W CW, 1.8-400 MHz, 65 V Data Sheet 应用笔记 Application Note 2 2 0 English This application note uses the 1800 W, 65 V MRFX1K80H LDMOS transistor comparing its linear model simulation results with measured circuit results. 1521171792590725237835 PSP 303.6 KB None None documents None 1521171792590725237835 /docs/en/application-note/AN12070.pdf 303620 /docs/en/application-note/AN12070.pdf AN12070 documents N N 2018-03-15 AN12070 - Using a Linear Transistor Model for RF Amplifier Design /docs/en/application-note/AN12070.pdf /docs/en/application-note/AN12070.pdf Application Note N 645036621402383989 2022-12-07 pdf N en Mar 13, 2018 645036621402383989 Application Note Y N AN12070 - Using a Linear Transistor Model for RF Amplifier Design 3 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 工程设计要点 Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 5 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins false 0 MRFX1K80H downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 5 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 2 /docs/en/application-note/AN12070.pdf 2018-03-15 1521171792590725237835 PSP 2 Mar 13, 2018 Application Note This application note uses the 1800 W, 65 V MRFX1K80H LDMOS transistor comparing its linear model simulation results with measured circuit results. None /docs/en/application-note/AN12070.pdf English documents 303620 None 645036621402383989 2022-12-07 N /docs/en/application-note/AN12070.pdf AN12070 - Using a Linear Transistor Model for RF Amplifier Design /docs/en/application-note/AN12070.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N AN12070 - Using a Linear Transistor Model for RF Amplifier Design 303.6 KB AN12070 N 1521171792590725237835 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 3 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 数据手册 1 /docs/en/data-sheet/MRFX1K80H.pdf 2017-08-29 1504029214784719618290 PSP 1 Sep 26, 2018 Data Sheet MRFX1K80H 1800 W CW over 1.8-400 MHz, 65 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications None /docs/en/data-sheet/MRFX1K80H.pdf English documents 1228319 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFX1K80H.pdf MRFX1K80H 1800 W CW, 1.8-400 MHz, 65 V Data Sheet /docs/en/data-sheet/MRFX1K80H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MRFX1K80H 1800 W CW, 1.8-400 MHz, 65 V Data Sheet 1.2 MB MRFX1K80H N 1504029214784719618290 true Y Products

文档

快速参考恩智浦 文档类别.

筛选条件

5 文件

紧凑列表

封装信息 (1)
工程设计要点 (1)
应用笔记 (2)
数据手册 (1)

设计文件

快速参考恩智浦 设计文件类型.
筛选条件

1-5/ 29 设计文件

展开

支持

您需要什么帮助?

  • Narrow your search
搜索

近期查看的产品

There are no recently viewed products to display.

查看或编辑浏览历史