MHT2012N_2450MHz, 12.5W连续波, 28V | NXP 半导体

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2450MHz, 12.5W连续波, 28V RF LDMOS集成功率放大器

MHT2012N
不推荐用于新设计
MHT2012N 12.5W连续波射频功率集成电路专为射频能量应用而设计，工作频率为2450MHz ISM频段。

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特性

  • 与分立设计相比，高增益简化了布局并减少了PCB面积
  • 工作电压最高可达32 VDD
  • 片上输入（50Ohm输入）和级间匹配
  • 集成静态电流温度补偿，具有启用/禁用功能
  • 集成的ESD保护
  • 150°C机箱和结点温度额定值
  • 作为高功率射频能量应用的理想驱动器
  • 符合RoHS规范
  • 消费电子和商业烹饪应用的驱动器
  • 面向工业加热应用的驱动程序，如杀菌、巴氏杀菌、干燥、调湿处理、固化和焊接
  • 医疗应用的驱动器，如微波消融、肾去神经支配术和透热术
  • 便携式加热设备和便携式医疗系统的最后阶段

射频性能表

典型性能

VDD=28Vdc, Pin=11dBm, IDQ1=15mA, IDQ2=75mA
频率
(MHz)		 信号类型 Gps
(dB)		 功率附加效率
(%)		 输出功率
(W)
2400连续波30.151.313.0
245030.051.412.7
250029.750.511.7

购买/参数

1 结果

不包含 1 不推荐用于新设计

部件

展开描述

订购

计算机辅助设计模型

状态

MHT2012N
数据手册

建议不要在新设计中使用该软件

N true 0 PSPMHT2012Nzh 4 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 0 English MHT2012N 12.5 W CW RF LDMOS integrated power amplifier designed for RF energy applications operating in the 2450 MHz ISM band 1531470347639707726269 PSP 444.6 KB None None documents None 1531470347639707726269 /docs/en/data-sheet/MHT2012N.pdf 444629 /docs/en/data-sheet/MHT2012N.pdf MHT2012N documents N N 2018-07-13 MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet /docs/en/data-sheet/MHT2012N.pdf /docs/en/data-sheet/MHT2012N.pdf Data Sheet N 980000996212993340 2023-08-24 pdf N en Jul 12, 2018 980000996212993340 Data Sheet Y N MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet 应用笔记 Application Note 1 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 工程设计要点 Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 4 B English 1894-02, 24 Terminal Thermally Enhanced Power Quad Flat Non-leaded (PQFN 8x8) 1159978986098697260288 PSP 44.4 KB None None documents None 1159978986098697260288 /docs/en/package-information/98ASA10760D.pdf 44356 /docs/en/package-information/98ASA10760D.pdf SOT1664-1 documents N N 2016-10-31 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins /docs/en/package-information/98ASA10760D.pdf /docs/en/package-information/98ASA10760D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 21, 2016 302435339416912908 Package Information D N 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins false 0 MHT2012N downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASA10760D.pdf 2016-10-31 1159978986098697260288 PSP 4 Mar 21, 2016 Package Information 1894-02, 24 Terminal Thermally Enhanced Power Quad Flat Non-leaded (PQFN 8x8) None /docs/en/package-information/98ASA10760D.pdf English documents 44356 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10760D.pdf 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins /docs/en/package-information/98ASA10760D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins 44.4 KB SOT1664-1 N 1159978986098697260288 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 1 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 数据手册 1 /docs/en/data-sheet/MHT2012N.pdf 2018-07-13 1531470347639707726269 PSP 1 Jul 12, 2018 Data Sheet MHT2012N 12.5 W CW RF LDMOS integrated power amplifier designed for RF energy applications operating in the 2450 MHz ISM band None /docs/en/data-sheet/MHT2012N.pdf English documents 444629 None 980000996212993340 2023-08-24 N /docs/en/data-sheet/MHT2012N.pdf MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet /docs/en/data-sheet/MHT2012N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N MHT2012N 12.5 W CW, 2450 MHz, 28 V Data Sheet 444.6 KB MHT2012N N 1531470347639707726269 true Y Products

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封装信息 (1)
工程设计要点 (1)
应用笔记 (1)
数据手册 (1)

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