MRFX1K80H 产品信息|NXP

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MRFX1K80H

不推荐用于新设计

MRFX1K80H

不推荐用于新设计
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特点

Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V

  • 数据手册:
  • PDF

封装

CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 13.72 mm pitch, 10.16 mm x 41.15 mm x 4.575 mm body

购买选项

MRFX1K80HR5

不推荐用于新设计

12NC: 935351859178

详细信息

  • 包装: REEL-Reel 13" Q2/T3 in SmallPack
  • 最小封装数量: 50
  • 起订量: 50
  • 交付周期: 10 weeks

订购

从分销商处购买

工作特点

参数值
fi(RF) [max] (MHz)
400
Number of pins
4
Package Style
CFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
65
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.09
P1dB (Typ) (dBm)
62.6
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 400
Efficiency (Typ) (%)
75.1
Frequency Band (Hz)
1800000, 400000000
参数值
Description
Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
fi(RF) [min] (MHz)
1.8
P1dB (Typ) (W)
1800
Gain (Typ) (dB)
25.1
Power Gain (Typ) (dB) @ f (MHz)
25.1 @ 230
Frequency (Max) (MHz)
400
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.4
frange [max] (MHz)
400
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.09
Matching
unmatched
Modes of Operation
pulsed radio frequency signal

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量（mg）
MRFX1K80HR5(935351859178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
2932.0

质量

部件/12NC安全保障功能安全封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
MRFX1K80HR5
(935351859178)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MRFX1K80HR5
(935351859178)
854129
EAR99

更多信息 MRFX1K80H

The MRFX1K80H is the first device based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.