MRF8VP13350N 产品信息|NXP

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技术

MRF8VP13350N

不推荐用于新设计

MRF8VP13350N

不推荐用于新设计

特点

RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V

  • 数据手册:
  • PDF

封装

FM4F: FM4F, plastic, flange mount flat package; 4 terminals; 9.96 mm x 20.57 mm x 3.81 mm body

购买选项

MRF8VP13350NR3

使用寿命终止

12NC: 935316089528

详细信息

  • 包装: REEL-Reel 13" Q2/T3 in Drypack
  • 最小封装数量: 250
  • 起订量: 250
  • 交付周期: 10 weeks

订购

工作特点

参数值
fi(RF) [max] (MHz)
1300
Number of pins
4
Package Style
DFM
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.040000003
P1dB (Typ) (dBm)
55.4
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
700, 1300
Efficiency (Typ) (%)
67.5
Peak Power (Typ) (W)
450
Frequency Band (Hz)
700000000, 1300000000
参数值
Description
RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
fi(RF) [min] (MHz)
700
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
350 @ CW
P1dB (Typ) (W)
350
Gain (Typ) (dB)
20.7
Power Gain (Typ) (dB) @ f (MHz)
20.7 @ 915
Frequency (Max) (MHz)
1300
Frequency (Min) (MHz)
700
Frequency (Min-Max) (GHz)
0.70000005 to 1.3000001
frange [max] (MHz)
1300
frange [min] (MHz)
700
Rth(j-a) (K/W)
0.040000003
Matching
input impedance matching
Modes of Operation
continuous wave

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量（mg）
MRF8VP13350NR3(935316089528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
3064.9
MRF8VP13350NR5(935316089578)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
3073.54

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接无铅焊接
MRF8VP13350NR3
(935316089528)
No
3
260
40
MRF8VP13350NR5
(935316089578)
No
3
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MRF8VP13350NR3
(935316089528)
854233
EAR99
MRF8VP13350NR5
(935316089578)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
MRF8VP13350NR5
(935316089578)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

更多信息 MRF8VP13350N

These 350 W CW transistors, MRF8VP13350N and MRF8VP13350GN, are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of 350 W CW or pulse power in narrowband operation.