AFT27S012N 产品信息|NXP

AFT27S012N

不推荐用于新设计

AFT27S012N

不推荐用于新设计

特点


Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W AVG., 28 V

封装


PLD4L: PLD4L, plastic, RF over-molded package designation; 4 terminals; 0 mm pitch; 5.85 mm x 6.61 mm x 1.74 mm body

购买选项

AFT27S012NT1

不推荐用于新设计

12NC: 935347325515

详细信息

订购

从分销商处购买

工作特点

参数
fi(RF) [max] (MHz)
2700
Number of pins
4
Amp Class
AB
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.3
P1dB (Typ) (dBm)
41.1
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
728, 2700
Efficiency (Typ) (%)
20.9
Frequency Band (Hz)
728000000, 2700000000
Description
Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W AVG., 28 V
参数
fi(RF) [min] (MHz)
728
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1.26 @ AVG
P1dB (Typ) (W)
13
Gain (Typ) (dB)
22.8
Power Gain (Typ) (dB) @ f (MHz)
22.8 @ 2170
Frequency (Max) (MHz)
2700
Frequency (Min) (MHz)
728
Frequency (Min-Max) (GHz)
0.72800004 to 2.7
frange [max] (MHz)
2700
frange [min] (MHz)
728
Rth(j-a) (K/W)
1.3
Matching
unmatched
Modes of Operation
wideband code division multiple access

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
AFT27S012NT1(935347325515)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
280.0

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
AFT27S012NT1
(935347325515)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
AFT27S012NT1
(935347325515)
854129
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
AFT27S012NT1
(935347325515)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label
AFT27S012NT1
(935347325515)
2017-12-202018-01-03201710023INew PQ Label Input for Non-MPQ Shipments

更多信息 AFT27S012N

The AFT27S012NT1 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.