A3T21H360W23S 产品信息|NXP

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技术

A3T21H360W23S

正常供应

A3T21H360W23S

正常供应

购买选项

工作特点

参数值
fi(RF) [max] (MHz)
2200
Number of pins
6
Package Style
CFM
Amp Class
AB, C
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB, C
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.21
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
2110, 2200
Efficiency (Typ) (%)
52
Peak Power (Typ) (W)
348
Frequency Band (Hz)
2110000000, 2200000000
参数值
Description
Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 56 W Avg., 28 V
fi(RF) [min] (MHz)
2110
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
56 @ AVG
Gain (Typ) (dB)
16.4
Power Gain (Typ) (dB) @ f (MHz)
16.4 @ 2110
Frequency (Max) (MHz)
2200
Frequency (Min) (MHz)
2110
Frequency (Min-Max) (GHz)
2.1100001 to 2.2
frange [max] (MHz)
2200
frange [min] (MHz)
2110
Rth(j-a) (K/W)
0.21
Matching
input and output impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
55.4

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量（mg）
A3T21H360W23SR6(935354511128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
6028.7

质量

部件/12NC安全保障功能安全封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
A3T21H360W23SR6
(935354511128)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A3T21H360W23SR6
(935354511128)
854233
EAR99

更多信息 A3T21H360W23S

The A3T21H360W23S 56 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.