Features
Battery Cell Controller, Advanced, 6 Channels, TPL, LQFP48.
Package
HLQFP48 LQFP64, plastic, low profile quad flat package; 64 terminals; 0.5 mm pitch; 10 mm x 10 mm x 1.4 mm body.
特点
Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V
购买选项
A3I35D025WGNR1
不推荐用于新设计
12NC: 935373851528
详细信息
订购
工作特点
| 参数 | 值 |
|---|---|
fi(RF) [max] (MHz) | 4000 |
Number of pins | 17 |
Package Style | DFM |
Amp Class | AB |
Test Signal | WCDMA |
Supply Voltage (Typ) (V) | 28 |
Class | AB |
Die Technology | LDMOS |
Thermal Resistance (Spec) (℃/W) | 1.7 |
Security Status | COMPANY PUBLIC |
Frequency (Min-Max) (MHz) | 3200, 4000 |
Efficiency (Typ) (%) | 17.3 |
Peak Power (Typ) (W) | 35 |
Frequency Band (Hz) | 3200000000, 4000000000 |
| 参数 | 值 |
|---|---|
Description | Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V |
fi(RF) [min] (MHz) | 3200 |
Output Power (Typ) (W) @ Intermodulation Level at Test Signal | 3.4 @ AVG |
Gain (Typ) (dB) | 28.9 |
Power Gain (Typ) (dB) @ f (MHz) | 28.9 @ 3600 |
Frequency (Max) (MHz) | 4000 |
Frequency (Min) (MHz) | 3200 |
Frequency (Min-Max) (GHz) | 3.2 to 4 |
frange [max] (MHz) | 4000 |
frange [min] (MHz) | 3200 |
Rth(j-a) (K/W) | 1.7 |
Matching | input and output impedance matching |
Modes of Operation | wideband code division multiple access |
Peak Power (Typ) (dBm) | 45.4 |
环境
| 部件/12NC | 无铅 | 欧盟 RoHS | 无卤素 | RHF指标 | REACH SVHC | 重量（mg） |
|---|---|---|---|---|---|---|
A3I35D025WGNR1(935373851528) | Yes | Yes Certificate Of Analysis (CoA) | Yes |  | REACH SVHC | 598.1 |
质量
| 部件/12NC | 安全保障功能安全 | 湿度灵敏度等级(MSL) | 封装体峰值温度（PPT）（C°） | Maximum Time at Peak Temperatures (s) | |||
|---|---|---|---|---|---|---|---|
| 无铅焊接 | 无铅焊接 | 无铅焊接 | |||||
A3I35D025WGNR1 (935373851528) | No | 3 | 260 | 40 | |||
配送
| 部件/12NC | 协调关税 (美国)免责声明 | 出口控制分类编号 (美国) |
|---|---|---|
A3I35D025WGNR1 (935373851528) | 854233 | EAR99 |
更多信息 A3I35D025WN
The A3I35D025WN wideband integrated circuit is designed for cellular base station applications requiring very wide instantaneous bandwidth capability. This circuit includes on-chip matching that makes it usable from 3200 to 4000 MHz. Its multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.