A2I20H060GN 产品信息|NXP

A2I20H060GN

不推荐用于新设计

A2I20H060GN

不推荐用于新设计

特点


Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V

封装


FM15F: FM15F, plastic, flange mount flat package; 15 terminals; 9.02 mm x 17.53 mm x 2.59 mm body

购买选项

A2I20H060GNR1

不推荐用于新设计

12NC: 935316306528

详细信息

订购

从分销商处购买

工作特点

参数
fi(RF) [max] (MHz)
2200
Number of pins
15
Package Style
DFM
Amp Class
AB
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.6
P1dB (Typ) (dBm)
48
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1800, 2200
Efficiency (Typ) (%)
43.8
Peak Power (Typ) (W)
74
Frequency Band (Hz)
1800000000, 2200000000
参数
Description
Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V
fi(RF) [min] (MHz)
1800
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
12 @ AVG
P1dB (Typ) (W)
63
Gain (Typ) (dB)
28.4
Power Gain (Typ) (dB) @ f (MHz)
28.4 @ 1840
Frequency (Max) (MHz)
2200
Frequency (Min) (MHz)
1800
Frequency (Min-Max) (GHz)
1.8000001 to 2.2
frange [max] (MHz)
2200
frange [min] (MHz)
1800
Rth(j-a) (K/W)
1.6
Matching
input impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
48.7

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
A2I20H060GNR1(935316306528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
1598.5

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
A2I20H060GNR1
(935316306528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A2I20H060GNR1
(935316306528)
854233
EAR99

更多信息 A2I20H060N

The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.