A2I20D020GN 产品信息|NXP

安全互联汽车

工业

消费电子

技术

A2I20D020GN

不推荐用于新设计

A2I20D020GN

不推荐用于新设计
sot1730-2_3d
点击展开

特点

Airfast RF LDMOS Wideband Integrated Power Amplifiers 1800-2200MHz, 2.5 W Avg., 28V

  • 数据手册:
  • PDF

封装

FM17F: plastic, flange mounted package; 17 leads flat; 1.02 mm pitch; 17.53 x 9.02 x 2.59 mm body

购买选项

A2I20D020GNR1

不推荐用于新设计

12NC: 935313109528

详细信息

  • 包装: REEL-Reel 13" Q2/T3 in Drypack
  • 最小封装数量: 500
  • 起订量: 500
  • 交付周期: 10 weeks

订购

从分销商处购买

工作特点

参数值
fi(RF) [max] (MHz)
2200
Number of pins
17
Package Style
DFM
Amp Class
AB
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
2.9
P1dB (Typ) (dBm)
42
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1400, 2200
Efficiency (Typ) (%)
19.7
Peak Power (Typ) (W)
24
Frequency Band (Hz)
1400000000, 2200000000
参数值
Description
Airfast RF LDMOS Wideband Integrated Power Amplifiers 1800-2200MHz, 2.5 W Avg., 28V
fi(RF) [min] (MHz)
1400
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
2.5 @ AVG
P1dB (Typ) (W)
16
Gain (Typ) (dB)
31
Power Gain (Typ) (dB) @ f (MHz)
31 @ 1800
Frequency (Max) (MHz)
2200
Frequency (Min) (MHz)
1400
Frequency (Min-Max) (GHz)
1.4000001 to 2.2
frange [max] (MHz)
2200
frange [min] (MHz)
1400
Rth(j-a) (K/W)
2.9
Matching
input and output impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
43.8

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量（mg）
A2I20D020GNR1(935313109528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
598.1

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
A2I20D020GNR1
(935313109528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A2I20D020GNR1
(935313109528)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
A2I20D020GNR1
(935313109528)
2019-02-222019-05-22201808025F01IMPROVED PASSIVE COMPONENT ATTACH MATERIAL FOR TO270WB PACKAGES

更多信息 A2I20D020N

The A2I20D020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.