MW6S010N 产品信息|NXP

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MW6S010N

不推荐用于新设计

MW6S010N

不推荐用于新设计
PDIP3, plastic shrink dual in-line package; 3 leads; 6.06 mm pitch; 9.65 mm x 6.1 mm x 2.03 mm body
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特点

Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V

  • 数据手册:
  • PDF

封装

FM2F: FM2F, plastic, flange mount flat package; 2 terminals; 6.1 mm x 9.65 mm x 2.03 mm body

购买选项

MW6S010NR1

不推荐用于新设计

12NC: 935319268528

详细信息

  • 包装: REEL-Reel 13" Q2/T3 in Drypack
  • 最小封装数量: 500
  • 起订量: 500
  • 交付周期: 10 weeks

订购

从分销商处购买

工作特点

参数值
fi(RF) [max] (MHz)
1500
Number of pins
2
Package Style
DFM
Amp Class
AB
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
2.85
P1dB (Typ) (dBm)
40
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
450, 1500
Efficiency (Typ) (%)
32
Frequency Band (Hz)
450000000, 1500000000
Intermodulation Distortion - IMD (Typ) (dBc)
-37
参数值
Description
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
fi(RF) [min] (MHz)
450
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
10 @ PEP
P1dB (Typ) (W)
10
Gain (Typ) (dB)
18
Power Gain (Typ) (dB) @ f (MHz)
18 @ 960
Frequency (Max) (MHz)
1500
Frequency (Min) (MHz)
450
Frequency (Min-Max) (GHz)
0.45000002 to 1.5
frange [max] (MHz)
1500
frange [min] (MHz)
450
Rth(j-a) (K/W)
2.85
Matching
unmatched
Intermodulation Distortion - IM3 (Typ) (dBc)
-37

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量（mg）
MW6S010NR1(935319268528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
529.55

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
MW6S010NR1
(935319268528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明
MW6S010NR1
(935319268528)
854129

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
MW6S010NR1
(935319268528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

更多信息 MW6S010N

The MW6S010NR1 and MW6S010GNR1 are designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.