SOT1732-1: FM2F

概述

FM2F, plastic, flange mount flat package; 2 terminals; 6.1 mm x 9.65 mm x 2.03 mm body

Package Version	Package Name	贴装	端子位置	封装风格	尺寸	終止計數	材料
SOT1732-1	FM2F	flange mount	double	DFM	6.1 x 9.65 x 2.03	2	plastic

生产代码	Reference Codes	Issue Date
98ASH98117A	PDIP-F2(JEDEC	2017-06-11

产品

部分	描述	Quick access
MW6S010N	Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V	View parametrics
AFT05MS031N	Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V	View parametrics
MMRF1012N	Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V	View parametrics
MRFE6VS25N	Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V	View parametrics
AFT20S015N	Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V	View parametrics
A3T09S100N	Airfast RF Power LDMOS Transistor, 100 W CW over 136 to 941 MHz, 32 V	View parametrics
MRFE6S9060N	Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V	View parametrics
MMRF1304N	Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V	View parametrics
A2T27S020N	Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V	View parametrics
MMRF1015N	Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V	View parametrics
MMRF1004N	GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V	View parametrics
AFT09MS031N	Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V	View parametrics