MRFE6VS25GN 产品信息|NXP

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MRFE6VS25GN

不推荐用于新设计

MRFE6VS25GN

不推荐用于新设计

购买选项

MRFE6VS25GNR1

不推荐用于新设计

12NC: 935314771528

详细信息

  • 包装: REEL-Reel 13" Q2/T3 in Drypack
  • 最小封装数量: 500
  • 起订量: 500
  • 交付周期: 10 weeks

订购

从分销商处购买

工作特点

参数值
fi(RF) [max] (MHz)
2000
Number of pins
2
Package Style
DFM
Amp Class
AB
Test Signal
CW
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.2
P1dB (Typ) (dBm)
44
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 2000
Efficiency (Typ) (%)
74.7
Peak Power (Typ) (W)
35
Frequency Band (Hz)
1800000, 2000000000
参数值
Description
Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
25 @ CW
P1dB (Typ) (W)
25
Gain (Typ) (dB)
25.5
Power Gain (Typ) (dB) @ f (MHz)
25.5 @ 512
Frequency (Max) (MHz)
2000
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 2
frange [max] (MHz)
2000
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
1.2
Matching
unmatched
Modes of Operation
continuous wave

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量（mg）
MRFE6VS25GNR1(935314771528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
548.0

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
MRFE6VS25GNR1
(935314771528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MRFE6VS25GNR1
(935314771528)
854129
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
MRFE6VS25GNR1
(935314771528)
2025-04-162025-05-26202504008IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
MRFE6VS25GNR1
(935314771528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

更多信息 MRFE6VS25N

MRFE6VS25NR1 and MRFE6VS25GNR1 are RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.