Package Version | Package Name | 贴装 | 端子位置 | 封装风格 | 尺寸 | 終止計數 | 材料 |
---|---|---|---|---|---|---|---|
SOT1731-1 | FM2 | flange mount | double | DFM | 6.1 x 9.65 x 2.03 | 2 | plastic |
生产代码 | Reference Codes | Issue Date |
---|---|---|
98ASA99301D | PDIP-G2(JEDEC | 2017-06-11 |
部分 | 描述 | Quick access |
---|---|---|
MMRF1304GN | Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V | View parametrics |
AFT09MS031GN | Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V | View parametrics |
AFT05MS031GN | Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V | View parametrics |
MW6S010GN | Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V | View parametrics |
MMRF1015GN | Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V | View parametrics |
A2T27S020GN | Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V | View parametrics |
MMRF1004GN | GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V | View parametrics |
MRFE6VS25GN | Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V | View parametrics |
AFT20S015GN | Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V | View parametrics |