MRFE6S9060N 产品信息|NXP

MRFE6S9060N

不推荐用于新设计

MRFE6S9060N

不推荐用于新设计

特点


Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V

封装


FM2F: FM2F, plastic, flange mount flat package; 2 terminals; 6.1 mm x 9.65 mm x 2.03 mm body

购买选项

MRFE6S9060NR1

不推荐用于新设计

12NC: 935309637528

详细信息

订购

从分销商处购买

工作特点

参数
fi(RF) [max] (MHz)
960
Number of pins
2
Package Style
DFM
Amp Class
AB
Test Signal
N-CDMA
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.88
P1dB (Typ) (dBm)
47.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
470, 960
Efficiency (Typ) (%)
33
Peak Power (Typ) (W)
135
Frequency Band (Hz)
470000000, 960000000
参数
Description
Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
fi(RF) [min] (MHz)
470
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
14 @ AVG
P1dB (Typ) (W)
60
Gain (Typ) (dB)
21.1
Power Gain (Typ) (dB) @ f (MHz)
21.1 @ 880
Frequency (Max) (MHz)
960
Frequency (Min) (MHz)
470
Frequency (Min-Max) (GHz)
0.47 to 0.96000004
frange [max] (MHz)
960
frange [min] (MHz)
470
Rth(j-a) (K/W)
0.88
Matching
unmatched
Modes of Operation
north american code division multiple access

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
MRFE6S9060NR1(935309637528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
529.55

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
MRFE6S9060NR1
(935309637528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明
MRFE6S9060NR1
(935309637528)
854233

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
MRFE6S9060NR1
(935309637528)
2025-04-162025-05-26202504008IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
MRFE6S9060NR1
(935309637528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

更多信息 MRFE6S9060NR1

The MRFE6S9060NR1 is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.