A3T18H360W23S 产品信息|NXP

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A3T18H360W23S

使用寿命终止

A3T18H360W23S

使用寿命终止

购买选项

工作特点

参数值
fi(RF) [max] (MHz)
1880
Number of pins
6
Package Style
CFM
Amp Class
AB, C
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB, C
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.22
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1805, 1880
Efficiency (Typ) (%)
51.6
Peak Power (Typ) (W)
375
Frequency Band (Hz)
1805000000, 1880000000
参数值
Description
Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 63 W Avg., 28 V
fi(RF) [min] (MHz)
1805
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
63 @ AVG
Gain (Typ) (dB)
16.6
Power Gain (Typ) (dB) @ f (MHz)
16.6 @ 1880
Frequency (Max) (MHz)
1880
Frequency (Min) (MHz)
1805
Frequency (Min-Max) (GHz)
1.8050001 to 1.88
frange [max] (MHz)
1880
frange [min] (MHz)
1805
Rth(j-a) (K/W)
0.22
Matching
input and output impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
54.7

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量（mg）
A3T18H360W23SR6(935346354128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
5884.54

质量

部件/12NC安全保障功能安全封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
A3T18H360W23SR6
(935346354128)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A3T18H360W23SR6
(935346354128)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
A3T18H360W23SR6
(935346354128)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

更多信息 A3T18H360W23S

The A3T18H360W23S 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.