A2T27S020GN 产品信息|NXP

购买选项

工作特点

参数
fi(RF) [max] (MHz)
2700
Number of pins
2
Package Style
DFM
Amp Class
AB
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
1.6
P1dB (Typ) (dBm)
43
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
400, 2700
Efficiency (Typ) (%)
20.9
Frequency Band (Hz)
400000000, 2700000000
参数
Description
Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V
fi(RF) [min] (MHz)
400
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
2.5 @ AVG
P1dB (Typ) (W)
20
Gain (Typ) (dB)
21.1
Power Gain (Typ) (dB) @ f (MHz)
21.1 @ 1840
Frequency (Max) (MHz)
2700
Frequency (Min) (MHz)
400
Frequency (Min-Max) (GHz)
0.4 to 2.7
frange [max] (MHz)
2700
frange [min] (MHz)
400
Rth(j-a) (K/W)
1.6
Matching
unmatched
Modes of Operation
wideband code division multiple access

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
A2T27S020GNR1(935331769528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
548.0

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
铅焊接铅焊接无铅焊接铅焊接无铅焊接
A2T27S020GNR1
(935331769528)
No
3
260
260
40
40

配送

部件/12NC协调关税 (美国)免责声明
A2T27S020GNR1
(935331769528)
854129

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
A2T27S020GNR1
(935331769528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

更多信息 A2T27S020N

The A2T27S020NR1 and A2T27S020GNR1 2.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 400 to 2700 MHz.