A2T14H450-23N 产品信息|NXP

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A2T14H450-23N

不推荐用于新设计

A2T14H450-23N

不推荐用于新设计

特点

Airfast RF Power LDMOS Transistor, 1427-1517 MHz, 93 W Avg., 31 V

  • 数据手册:
  • PDF

封装

FM6F: FM6F, plastic, flange mount flat package; 6 terminals; 9.96 mm x 32.26 mm x 3.81 mm body

购买选项

A2T14H450-23NR6

不推荐用于新设计

12NC: 935316214528

详细信息

  • 包装: REEL-Reel 13" Q2/T3 in Drypack
  • 最小封装数量: 150
  • 起订量: 150
  • 交付周期: 10 weeks

订购

从分销商处购买

工作特点

参数值
fi(RF) [max] (MHz)
1511
Number of pins
6
Package Style
DFM
Amp Class
AB, C
Test Signal
WCDMA
Supply Voltage (Typ) (V)
31
Class
AB, C
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.27
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1427, 1511
Efficiency (Typ) (%)
48.2
Peak Power (Typ) (W)
560
Frequency Band (Hz)
1427000000, 1511000000
参数值
Description
Airfast RF Power LDMOS Transistor, 1427-1517 MHz, 93 W Avg., 31 V
fi(RF) [min] (MHz)
1427
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
93 @ AVG
Gain (Typ) (dB)
18.8
Power Gain (Typ) (dB) @ f (MHz)
18.8 @ 1452
Frequency (Max) (MHz)
1511
Frequency (Min) (MHz)
1427
Frequency (Min-Max) (GHz)
1.427 to 1.511
frange [max] (MHz)
1511
frange [min] (MHz)
1427
Rth(j-a) (K/W)
0.27
Matching
input and output impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
57.5

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量（mg）
A2T14H450-23NR6(935316214528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
5292.2

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度（PPT）（C°）Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接无铅焊接
A2T14H450-23NR6
(935316214528)
No
3
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
A2T14H450-23NR6
(935316214528)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
A2T14H450-23NR6
(935316214528)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
A2T14H450-23NR6
(935316214528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label
A2T14H450-23NR6
(935316214528)
2020-05-092020-05-10202005002IOM1230 Internal Plating Thickness Change on Package Flange/Heatsink

更多信息 A2T14H450-23N

The A2T14H450-23N 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz.