MRF13750H_750 W连续波频率为700-1300 MHz，50 V | NXP 半导体

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750 W连续波，700-1300 MHz，50 V LDMOS射频功率晶体管

MRF13750H
正常供应

滚动图片以放大

MRF13750H和MRF13750HS这些750 W连续波晶体管，设计用于700至1300 MHz频率范围的工业、科学和医疗(ISM)应用。这些晶体管在窄带运行中能够支持连续波或脉冲功率。

产品详情

特征

  • 内部输入预匹配，简单易用
  • 器件可用于单端或推挽配置中
  • 电压范围为30至50 V
  • 适用于有适当偏置的线性应用。
  • 集成的ESD保护
  • 推荐的驱动器：MRFE6VS25GN (25 W)
  • 包含在产品长期供货计划中，自推出后至少保证15年供货
  • 符合RoHS规范
  • 915 MHz工业加热/焊接系统
  • 1300 MHz粒子加速器

射频性能表

典型性能

VDD = 50 Vdc
频率
(MHz)		 信号类型 输出功率
(W)		 Gps
(dB)		 ηD
(%)
915 (1)连续波75019.367.1
915 (2)脉冲
(100 µsec，10%占空比)		85020.569.2
1300 (3)连续波70017.256.0

负载不匹配/耐用性

频率
(MHz)		 信号类型 VSWR 输入功率
(W)		 测试
电压		 结果
915 (2) 脉冲
(100 µsec，10%占空比)		 > 10:1所有相角 15.9 峰值
(3 dB 过驱)		 50 无器件退化
1.在915 MHz窄带参考电路中测量。
2.在915 MHz窄带生产测试夹具中测量。
3.在1300 MHz窄带参考电路中测量。

购买/参数

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N true 0 PSPMRF13750Hzh 5 封装信息 Package Information t790 2 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English MRF13750H 750 W CW over 700-1300 MHz, 50 V RF power transistor designed for use in industrial, scientific and medical applications 1514078511764715130603 PSP 512.1 KB None None documents None 1514078511764715130603 /docs/en/data-sheet/MRF13750H.pdf 512111 /docs/en/data-sheet/MRF13750H.pdf MRF13750H documents N N 2017-12-23 MRF13750H 750 W CW, 700-1300 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF13750H.pdf /docs/en/data-sheet/MRF13750H.pdf Data Sheet N 980000996212993340 2024-03-13 pdf N en Jan 19, 2018 980000996212993340 Data Sheet Y N MRF13750H 750 W CW, 700-1300 MHz, 50 V Data Sheet 应用笔记 Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 工程设计要点 Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 2 4 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 5 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins false 0 MRF13750H downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 4 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 5 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 数据手册 1 /docs/en/data-sheet/MRF13750H.pdf 2017-12-23 1514078511764715130603 PSP 1 Jan 19, 2018 Data Sheet MRF13750H 750 W CW over 700-1300 MHz, 50 V RF power transistor designed for use in industrial, scientific and medical applications None /docs/en/data-sheet/MRF13750H.pdf English documents 512111 None 980000996212993340 2024-03-13 N /docs/en/data-sheet/MRF13750H.pdf MRF13750H 750 W CW, 700-1300 MHz, 50 V Data Sheet /docs/en/data-sheet/MRF13750H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MRF13750H 750 W CW, 700-1300 MHz, 50 V Data Sheet 512.1 KB MRF13750H N 1514078511764715130603 true Y Products

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封装信息 (2)
工程设计要点 (1)
应用笔记 (1)
数据手册 (1)

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