AFM906N_6 W连续波，136-941MHz，7.5V | NXP 半导体

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技术

6W连续波，136-941MHz，7.5V Airfast® LDMOS宽带射频功率晶体管

AFM906N
不推荐用于新设计
AFM906N专为频率范围在136至941MHz之间的手持双向对讲机应用而设计。这些器件具有高增益、耐用性、宽带性能，适用于手持对讲机设备中的大信号、共源放大器应用。

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特性

  • 运行频率在136到941MHz之间
  • 未匹配的输入和输出，可适用更宽的频率范围
  • 集成的ESD保护
  • 集成的稳定性增强功能
  • 宽带 - 整个频段全功率
  • 卓越的热性能
  • 非常耐用
  • 高线性度：TETRA、SSB
  • 符合RoHS规范
  • 输出级VHF频段手持对讲机
  • 输出级UHF频段手持对讲机
  • 输出级700-800MHz手持对讲机
  • 面向ISM和广播末级晶体管的通用6 W驱动器

射频性能表

宽带性能

(在440-520MHz参考电路中，7.5Vdc，TA = 25°C，连续波)
频率
(MHz)		 输入功率
(W)		 Gps
(dB)		 ηD
(%)		 输出功率
(W)
440-520(1,2)0.1616.262.06.5

窄带性能

(7.5Vdc，IDQ = 100mA，TA = 25°C，连续波)
频率
(MHz)		 Gps
(dB)		 ηD
(%)		 输出功率
(W)
520(3)20.370.86.8

负载不匹配/耐用性

频率
(MHz)		 信号类型 VSWR 输入功率
(dBm)		 测试
电压		 结果
520(3) 连续波 > 65:1所有相角 21
（3dB过驱）		 10.8 无器件退化
1. 在440-520MHz宽带参考电路上测量。
2. 显示的值为指定频率范围内的最小测得性能数。
3. 在520MHz的窄带生产测试装置上测量。

购买/参数

1 结果

不包含 1 不推荐用于新设计

部件

展开描述

订购

计算机辅助设计模型

状态

AFM906N
数据手册

建议不要在新设计中使用该软件

N true 0 PSPAFM906Nzh 4 封装信息 Package Information t790 1 工程设计要点 Technical Notes t521 1 应用笔记 Application Note t789 1 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 2 English AFM906N 6 W over 136-941 MHz, 7.5 V high gain, rugged RF power LDMOS transistor for handheld radio equipment 1469753932048701247363 PSP 870.0 KB None None documents None 1469753932048701247363 /docs/en/data-sheet/AFM906N.pdf 869954 /docs/en/data-sheet/AFM906N.pdf AFM906N documents N N 2018-11-02 AFM906N 6 W over 136-941 MHz, 7.5 V Data Sheet /docs/en/data-sheet/AFM906N.pdf /docs/en/data-sheet/AFM906N.pdf Data Sheet N 980000996212993340 2024-03-13 pdf N en Nov 2, 2018 980000996212993340 Data Sheet Y N AFM906N 6 W over 136-941 MHz, 7.5 V Data Sheet 应用笔记 Application Note 1 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 工程设计要点 Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 1 4 B English 1472460122444712310725 PSP 51.9 KB None None documents None 1472460122444712310725 /docs/en/package-information/98ASA00868D.pdf 51876 /docs/en/package-information/98ASA00868D.pdf SOT1862-1 documents N N 2016-11-09 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins /docs/en/package-information/98ASA00868D.pdf /docs/en/package-information/98ASA00868D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jul 27, 2016 302435339416912908 Package Information D N 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins false 0 AFM906N downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASA00868D.pdf 2016-11-09 1472460122444712310725 PSP 4 Jul 27, 2016 Package Information None /docs/en/package-information/98ASA00868D.pdf English documents 51876 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00868D.pdf 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins /docs/en/package-information/98ASA00868D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00868D, DFN 4 x 6, 4.0x6.0x0.9, Pitch 0.65, 17 Pins 51.9 KB SOT1862-1 N 1472460122444712310725 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 应用笔记 1 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 数据手册 1 /docs/en/data-sheet/AFM906N.pdf 2018-11-02 1469753932048701247363 PSP 1 Nov 2, 2018 Data Sheet AFM906N 6 W over 136-941 MHz, 7.5 V high gain, rugged RF power LDMOS transistor for handheld radio equipment None /docs/en/data-sheet/AFM906N.pdf English documents 869954 None 980000996212993340 2024-03-13 N /docs/en/data-sheet/AFM906N.pdf AFM906N 6 W over 136-941 MHz, 7.5 V Data Sheet /docs/en/data-sheet/AFM906N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N AFM906N 6 W over 136-941 MHz, 7.5 V Data Sheet 870.0 KB AFM906N N 1469753932048701247363 true Y Products

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封装信息 (1)
工程设计要点 (1)
应用笔记 (1)
数据手册 (1)

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