AFT05MP075N_70 W连续波,136-520MHz,12.5V | NXP 半导体

136-520MHz,70W,12.5V LDMOS宽带射频功率晶体管

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产品详情

特性

  • 运行频率在136至520MHz之间
  • 未匹配的输入和输出,可适用更宽的频率范围
  • 集成的ESD保护
  • 集成的稳定性增强功能
  • 宽带 - 整个频段全功率
  • 卓越的热性能
  • 非常耐用
  • 高线性度:TETRA、SSB和LTE
  • 符合RoHS规范
  • 采用盘卷包装。R1后缀 = 500个,44mm卷带宽度,13英寸卷盘。
  • 输出级VHF频段移动无线设备
  • 输出级UHF频段移动无线设备

射频性能表

典型性能

12.5V,TA = 25°C,连续波

耐用性

购买/参数










































































































N true 0 PSPAFT05MP075Nzh 8 封装信息 Package Information t790 2 应用笔记 Application Note t789 3 支持信息 Supporting Information t531 1 数据手册 Data Sheet t520 1 白皮书 White Paper t530 1 zh zh zh 数据手册 Data Sheet 1 1 1 English AFT05MP075N and AFT05MP075GN are designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment. 1360356457780702938806 PSP 1.0 MB None None documents None 1360356457780702938806 /docs/en/data-sheet/AFT05MP075N.pdf 1007951 /docs/en/data-sheet/AFT05MP075N.pdf AFT05MP075N documents N N 2016-10-31 AFT05MP075NR1, AFT05MP075GNR1 136-520 MHz, 70 W AVG., 12.5 V Broadband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT05MP075N.pdf /docs/en/data-sheet/AFT05MP075N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Aug 14, 2014 980000996212993340 Data Sheet Y N AFT05MP075NR1, AFT05MP075GNR1 136-520 MHz, 70 W AVG., 12.5 V Broadband RF Power LDMOS Transistors - Data Sheet 应用笔记 Application Note 3 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 4 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 封装信息 Package Information 2 5 E English 98ASA10578D, 1487-05, TO-270 4 LEAD, Wide Body Gull Wing 117Dp21m PSP 75.2 KB None None documents None 117Dp21m /docs/en/package-information/98ASA10578D.pdf 75249 /docs/en/package-information/98ASA10578D.pdf SOT1736-2 documents N N 2016-10-31 98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins /docs/en/package-information/98ASA10578D.pdf /docs/en/package-information/98ASA10578D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 17, 2016 302435339416912908 Package Information D N 98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins 6 F English 98ASA10577D, 1486-03, TO-270, 4 Lead 117Dnwyr PSP 75.9 KB None None documents None 117Dnwyr /docs/en/package-information/98ASA10577D.pdf 75944 /docs/en/package-information/98ASA10577D.pdf SOT1736-1 documents N N 2016-10-31 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins /docs/en/package-information/98ASA10577D.pdf /docs/en/package-information/98ASA10577D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jan 18, 2016 302435339416912908 Package Information D N 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins 支持信息 Supporting Information 1 7 0 English Land Mobile Airfast<sup>&#174;</sup> products: AFT05MS031N and AFT09MS031N 1340065802618738876669 PSP 877.8 KB None None documents None 1340065802618738876669 /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf 877821 /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf LANDMOBILE_TRN_SI documents N N 2016-10-31 New Generation of Land Mobile Radio Products /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf Supporting Information N 371282830530968666 2022-12-07 pdf N en Jun 15, 2012 371282830530968666 Supporting Information Y N New Generation of Land Mobile Radio Products 白皮书 White Paper 1 8 2 English Describes main benefits of RF power plastic packages and recommendations on PCB layout, mounting and soldering techniques for designs using plastic RF PAs. 1415247676533716175304 PSP 911.8 KB None None documents None 1415247676533716175304 /docs/en/white-paper/RFPLASTICWP.pdf 911768 /docs/en/white-paper/RFPLASTICWP.pdf RFPLASTICWP documents N N 2016-10-31 Designing with Plastic RF Power Transistors White Paper /docs/en/white-paper/RFPLASTICWP.pdf /docs/en/white-paper/RFPLASTICWP.pdf White Paper N 918633085541740938 2024-03-13 pdf N en Sep 24, 2015 918633085541740938 White Paper Y N Designing with Plastic RF Power Transistors White Paper false 0 AFT05MP075N downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASA10578D.pdf 2016-10-31 117Dp21m PSP 5 Mar 17, 2016 Package Information 98ASA10578D, 1487-05, TO-270 4 LEAD, Wide Body Gull Wing None /docs/en/package-information/98ASA10578D.pdf English documents 75249 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10578D.pdf 98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins /docs/en/package-information/98ASA10578D.pdf documents 302435339416912908 Package Information N en None D pdf E N N 98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins 75.2 KB SOT1736-2 N 117Dp21m /docs/en/package-information/98ASA10577D.pdf 2016-10-31 117Dnwyr PSP 6 Jan 18, 2016 Package Information 98ASA10577D, 1486-03, TO-270, 4 Lead None /docs/en/package-information/98ASA10577D.pdf English documents 75944 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10577D.pdf 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins /docs/en/package-information/98ASA10577D.pdf documents 302435339416912908 Package Information N en None D pdf F N N 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins 75.9 KB SOT1736-1 N 117Dnwyr 应用笔记 3 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 4 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 支持信息 1 /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf 2016-10-31 1340065802618738876669 PSP 7 Jun 15, 2012 Supporting Information Land Mobile Airfast<sup>&#174;</sup> products: AFT05MS031N and AFT09MS031N None /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf English documents 877821 None 371282830530968666 2022-12-07 N /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf New Generation of Land Mobile Radio Products /docs/en/supporting-information/LANDMOBILE_TRN_SI.pdf documents 371282830530968666 Supporting Information N en None Y pdf 0 N N New Generation of Land Mobile Radio Products 877.8 KB LANDMOBILE_TRN_SI N 1340065802618738876669 数据手册 1 /docs/en/data-sheet/AFT05MP075N.pdf 2016-10-31 1360356457780702938806 PSP 1 Aug 14, 2014 Data Sheet AFT05MP075N and AFT05MP075GN are designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment. None /docs/en/data-sheet/AFT05MP075N.pdf English documents 1007951 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT05MP075N.pdf AFT05MP075NR1, AFT05MP075GNR1 136-520 MHz, 70 W AVG., 12.5 V Broadband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT05MP075N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N AFT05MP075NR1, AFT05MP075GNR1 136-520 MHz, 70 W AVG., 12.5 V Broadband RF Power LDMOS Transistors - Data Sheet 1.0 MB AFT05MP075N N 1360356457780702938806 白皮书 1 /docs/en/white-paper/RFPLASTICWP.pdf 2016-10-31 1415247676533716175304 PSP 8 Sep 24, 2015 White Paper Describes main benefits of RF power plastic packages and recommendations on PCB layout, mounting and soldering techniques for designs using plastic RF PAs. None /docs/en/white-paper/RFPLASTICWP.pdf English documents 911768 None 918633085541740938 2024-03-13 N /docs/en/white-paper/RFPLASTICWP.pdf Designing with Plastic RF Power Transistors White Paper /docs/en/white-paper/RFPLASTICWP.pdf documents 918633085541740938 White Paper N en None Y pdf 2 N N Designing with Plastic RF Power Transistors White Paper 911.8 KB RFPLASTICWP N 1415247676533716175304 true Y Products

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封装信息 (2)
应用笔记 (3)
支持信息 (1)
数据手册 (1)
白皮书 (1)

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