设计文件
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1200-1400 MHz, 1000 W Peak, 52 V Airfast® RF Power LDMOS Transistors
- 建议不要在新设计中使用本页介绍的产品。
These RF power devices, MMRF1314H, MMRF1314HS and MMRF1314GS, are designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The devices are suitable for use in pulse applications and are ideal for use in high power military and commercial L-Band radar applications.
NI-1230H-4S, NI-1230S-4S, NI-1230GS-4L Package Image
产品详情
Features
- Internally input and output matched for broadband operation and ease of use
- Device can be used in a single-ended, push-pull or quadrature configuration
- Qualified up to a maximum of 52 VDD operation
- High ruggedness, handles > 20:1 VSWR
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing
- Characterized with series equivalent large-signal impedance parameters
- RoHS Compliant
- These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.
- Military and commercial L-Band radar systems
部件编号包含： MMRF1314H, MMRF1314HS.
RF Performance Tables
Typical Performance
In 1200-1400 MHz reference circuit, VDD = 52 Vdc, IDQ(A+B) = 100 mA| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 1200 | Pulse (128 µsec, 10% Duty Cycle) | 1130 Peak | 15.5 | 47.5 |
| 1300 | 1170 Peak | 17.2 | 47.0 | |
| 1400 | 1000 Peak | 17.0 | 46.5 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 1400 | Pulse (128 µsec, 10% Duty Cycle) | > 20:1 at all Phase Angles | 31.6 Peak (3 dB Overdrive) | 52 | No Device Degradation |
购买/参数
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