MRFE6VP5600H_600W连续波, 1.8-600MHz, 50V | NXP 半导体

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工业

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技术

1.8-600MHz，600W连续波，50V宽带射频功率LDMOS

MRFE6VP5600H
正常供应
MRFE6VP5600HR6和MRFE6VP5600HSR6高耐用性器件专为高VSWR工业（包括激光和等离子体激励器）、广播（模拟和数字）、航空和无线/陆地移动应用而设计。它们采用输入和输出未匹配设计，支持更宽的频率范围，1.8-600MHz。

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产品详情

特性

  • 未匹配的输入和输出，可适用更宽的频率范围
  • 器件可用于单端或推挽配置中
  • 工作电压最高可达50VDD
  • 特征参数取样自30V至50V，适用于更宽的功率范围
  • 适用于有适当偏置的线性应用。
  • 集成的ESD保护，带有增大负栅源电压范围，改善C类放大器运行
  • 提供串联等效大信号阻抗参数
  • 符合RoHS规范
  • 采用盘卷包装。R6后缀=150个，56mm卷带宽度，13英寸卷盘。

射频性能表

230MHz窄带

典型性能：VDD=50V，IDQ=100mA
信号类型 输出功率
(W)		 f
(MHz)		 Gps
(dB)		 ηD
(%)		 IRL
(dB)
脉冲（100µsec，
20%占空比）		 600峰值23025.074.6–18
连续波 600平均值23024.675.2–17
  • 在50Vdc，230MHz时，对于所有相角能承受65:1 VSWR的负载不匹配，旨在增强耐用性。
    • 脉冲峰值功率600瓦，占空比|占空系数20%，100微秒

购买/参数

1 结果

包含 2 不推荐用于新设计

部件

展开描述

订购

计算机辅助设计模型

状态

MRFE6VP5600-434
数据手册

正常供应

N true 0 PSPMRFE6VP5600Hzh 4 封装信息 Package Information t790 2 工程设计要点 Technical Notes t521 1 数据手册 Data Sheet t520 1 zh zh zh 数据手册 Data Sheet 1 1 1 English These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. 1292361829449715661463 PSP 952.8 KB None None documents None 1292361829449715661463 /docs/en/data-sheet/MRFE6VP5600H.pdf 952821 /docs/en/data-sheet/MRFE6VP5600H.pdf MRFE6VP5600H documents N N 2016-10-31 MRFE6VP5600HR6, MRFE6VP5600HSR6 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRFE6VP5600H.pdf /docs/en/data-sheet/MRFE6VP5600H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jan 6, 2011 980000996212993340 Data Sheet Y N MRFE6VP5600HR6, MRFE6VP5600HSR6 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs 工程设计要点 Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 2 3 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 4 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins false 0 MRFE6VP5600H downloads zh-Hans true 1 Y PSP 封装信息 2 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 3 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 4 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 数据手册 1 /docs/en/data-sheet/MRFE6VP5600H.pdf 2016-10-31 1292361829449715661463 PSP 1 Jan 6, 2011 Data Sheet These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. None /docs/en/data-sheet/MRFE6VP5600H.pdf English documents 952821 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFE6VP5600H.pdf MRFE6VP5600HR6, MRFE6VP5600HSR6 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs /docs/en/data-sheet/MRFE6VP5600H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N MRFE6VP5600HR6, MRFE6VP5600HSR6 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs 952.8 KB MRFE6VP5600H N 1292361829449715661463 true Y Products

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