MRFE6VP61K25H_1250W连续波, 1.8-600MHz | NXP 半导体

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技术

1.8-600MHz，1250W连续波，50V LDMOS宽带射频功率晶体管

MRFE6VP61K25H
正常供应
MRFE6VP61K25H、MRFE6VP61K25HS和MRFE6VP61K25GS高耐用器件专为高VSWR工业（包括激光和等离子体激励器）、广播（模拟和数字）、航空和无线/陆地移动应用而设计。它们采用输入和输出未匹配设计，支持更宽的频率范围，1.8-600MHz。

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产品详情

特性

  • 未匹配的输入和输出，可适用更宽的频率范围
  • 器件可用于单端或推挽配置中
  • 工作电压最高可达50VDD
  • 特征参数取样自30V至50V，适用于更宽的功率范围
  • 适用于有适当偏置的线性应用。
  • 集成的ESD保护，带有增大负栅源电压范围，改善C类放大器运行
  • 提供串联等效大信号阻抗参数
  • 符合RoHS规范
  • 采用盘卷包装。R6后缀 = 150个，56mm卷带宽度，13英寸卷盘。

射频性能表

典型窄带性能

VDD=50V，IDQ=100mA
信号类型 输出功率
(W)		 f
(MHz)		 Gps
(dB)		 ηD
(%)
脉冲
（100 µsec，20%占空比）		 1250峰值23024.074.0
连续波 1250连续波23022.974.6

应用电路 - 典型性能

频率
(MHz)		 信号类型 输出功率
(W)		 Gps
(dB)		 ηD
(%)
27连续波13002781
40连续波13002685
81.36连续波12502784
87.5-108连续波11002480
144-148连续波12502678
170-230DVBT2252530
352脉冲
（200µsec，
20%占空比）		125021.566
352连续波115020.568
500连续波10001858

负载不匹配/耐用性

频率
(MHz)		 信号类型 VSWR 输出功率
(W)		 测试
电压		 结果
230 脉冲
（100µsec，
20%占空比）		 >65:1所有
相角		 1500峰值
（3dB过驱）		 50 无器件
退化

购买/参数

1 结果

包含 3 不推荐用于新设计

部件

展开描述

订购

计算机辅助设计模型

状态

MRFE6VP61K25-VHF
数据手册

正常供应

N true 0 PSPMRFE6VP61K25Hzh 6 封装信息 Package Information t790 3 工程设计要点 Technical Notes t521 1 数据手册 Data Sheet t520 1 白皮书 White Paper t530 1 zh zh zh 数据手册 Data Sheet 1 1 4.1 English MRFE6VP61K25H, MRFE6VP61K25HS, and MRFE6VP61K25GS are high ruggedness devices and are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. 1289594120780716045018 PSP 990.4 KB None None documents None 1289594120780716045018 /docs/en/data-sheet/MRFE6VP61K25H.pdf 990366 /docs/en/data-sheet/MRFE6VP61K25H.pdf MRFE6VP61K25H documents N N 2016-10-31 MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25GS 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/MRFE6VP61K25H.pdf /docs/en/data-sheet/MRFE6VP61K25H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 11, 2014 980000996212993340 Data Sheet Y N MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25GS 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet 工程设计要点 Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices 封装信息 Package Information 3 3 H English 98ASB16977C, NI-1230H-4S A1003176946486 PSP 159.0 KB None None documents None A1003176946486 /docs/en/package-information/98ASB16977C.pdf 159037 /docs/en/package-information/98ASB16977C.pdf SOT1787-1 documents N N 2016-10-31 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf /docs/en/package-information/98ASB16977C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Oct 25, 2019 302435339416912908 Package Information D N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 4 B English 1349216465058725247011 PSP 48.5 KB None None documents None 1349216465058725247011 /docs/en/package-information/98ASA00459D.pdf 48461 /docs/en/package-information/98ASA00459D.pdf SOT1806-2 documents N N 2016-10-31 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00459D.pdf /docs/en/package-information/98ASA00459D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 29, 2016 302435339416912908 Package Information D N 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins 5 H English 98ARB18247C, 375E-04, NI-1230S-4S B1003167510411 PSP 44.6 KB None None documents None B1003167510411 /docs/en/package-information/98ARB18247C.pdf 44578 /docs/en/package-information/98ARB18247C.pdf SOT1829-1 documents N N 2016-10-31 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf /docs/en/package-information/98ARB18247C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 23, 2016 302435339416912908 Package Information D N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 白皮书 White Paper 1 6 1 English NXP<sup>&reg;</sup> RF power LDMOS transistors and RF integrated circuits (RFICs) can replace legacy RF power devices to better serve medical applications. 1486618696473728474245 PSP 414.0 KB None None documents None 1486618696473728474245 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf 413950 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf rf-energy-in-medicine-white-paper documents N N 2017-02-08 RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf White Paper N 918633085541740938 2022-12-07 pdf N en Oct 19, 2017 918633085541740938 White Paper Y N RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power false 0 MRFE6VP61K25H downloads zh-Hans true 1 Y PSP 封装信息 3 /docs/en/package-information/98ASB16977C.pdf 2016-10-31 A1003176946486 PSP 3 Oct 25, 2019 Package Information 98ASB16977C, NI-1230H-4S None /docs/en/package-information/98ASB16977C.pdf English documents 159037 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16977C.pdf 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ASB16977C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB16977C, NI-1230H-4S, 41.15x10.16x4.19, Pitch 13.72, 5 Pins 159.0 KB SOT1787-1 N A1003176946486 /docs/en/package-information/98ASA00459D.pdf 2016-10-31 1349216465058725247011 PSP 4 Feb 29, 2016 Package Information None /docs/en/package-information/98ASA00459D.pdf English documents 48461 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00459D.pdf 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00459D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00459D, NI-C, 32.26x10.16x4.24, Pitch 13.72, 5 Pins 48.5 KB SOT1806-2 N 1349216465058725247011 /docs/en/package-information/98ARB18247C.pdf 2016-10-31 B1003167510411 PSP 5 Feb 23, 2016 Package Information 98ARB18247C, 375E-04, NI-1230S-4S None /docs/en/package-information/98ARB18247C.pdf English documents 44578 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARB18247C.pdf 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins /docs/en/package-information/98ARB18247C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ARB18247C, NI-1230S-4S, 32.26x10.16x4.19, Pitch 13.72, 5 Pins 44.6 KB SOT1829-1 N B1003167510411 工程设计要点 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 数据手册 1 /docs/en/data-sheet/MRFE6VP61K25H.pdf 2016-10-31 1289594120780716045018 PSP 1 Mar 11, 2014 Data Sheet MRFE6VP61K25H, MRFE6VP61K25HS, and MRFE6VP61K25GS are high ruggedness devices and are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. None /docs/en/data-sheet/MRFE6VP61K25H.pdf English documents 990366 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRFE6VP61K25H.pdf MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25GS 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/MRFE6VP61K25H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 4.1 N N MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25GS 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet 990.4 KB MRFE6VP61K25H N 1289594120780716045018 白皮书 1 /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf 2017-02-08 1486618696473728474245 PSP 6 Oct 19, 2017 White Paper NXP<sup>&reg;</sup> RF power LDMOS transistors and RF integrated circuits (RFICs) can replace legacy RF power devices to better serve medical applications. None /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf English documents 413950 None 918633085541740938 2022-12-07 N /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power /docs/en/white-paper/rf-energy-in-medicine-white-paper.pdf documents 918633085541740938 White Paper N en None Y pdf 1 N N RF Energy in Medicine: Innovative Solutions Using Solid-State RF Power 414.0 KB rf-energy-in-medicine-white-paper N 1486618696473728474245 true Y Products

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