1-2000 MHz，4 W，28 V射频功率LDMOS | NXP 半导体

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1-2000 MHz，4 W，28 V射频功率LDMOS

MW6S004NT1
不推荐用于新设计
MW6S004NT1专为频率高达2000 MHz的A类或AB类基站应用而设计。适用于模拟和数字调制及多载波放大器应用。

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特征

  • 1960 MHz，28 V时的典型双频性能：IDQ = 50 mA，输出功率 = 4 W PEP
    功率增益：18 dB
    漏极效率：33%
    IMD：–34 dBc
  • 900 MHz，28 V时的典型双频性能：IDQ = 50 mA，输出功率 = 4 W PEP
    功率增益：19 dB
    漏极效率：33%
    IMD：–39 dBc
  • 在28 Vdc，1960 MHz，4 W连续波输出功率时，能承受5:1 VSWR
  • 提供串联等效大信号阻抗参数
  • 片上射频反馈，实现宽带稳定性
  • 集成的ESD保护
  • 符合RoHS规范
  • 采用盘卷包装。T1后缀 = 1000个，12 mm卷带宽度，7英寸卷盘。
N true 0 PSPMW6S004NT1zh 2 封装信息 Package Information t790 1 数据手册 Data Sheet t520 1 zh 0 false zh zh 数据手册 Data Sheet 1 1 4 English Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. 1136501699625709838469 PSP 510.6 KB None None documents None 1136501699625709838469 /docs/en/data-sheet/MW6S004N.pdf 510614 /docs/en/data-sheet/MW6S004N.pdf MW6S004N documents N N 2016-10-31 MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET /docs/en/data-sheet/MW6S004N.pdf /docs/en/data-sheet/MW6S004N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jun 19, 2009 980000996212993340 Data Sheet Y N MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 封装信息 Package Information 1 2 E English 98ASB15740C, 466-03, PLD-1.5 V1003176855715 PSP 51.5 KB None None documents None V1003176855715 /docs/en/package-information/98ASB15740C.pdf 51489 /docs/en/package-information/98ASB15740C.pdf SOT1811-1 documents N N 2016-10-31 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins /docs/en/package-information/98ASB15740C.pdf /docs/en/package-information/98ASB15740C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins false 0 MW6S004NT1 downloads zh-Hans true 1 Y PSP 封装信息 1 /docs/en/package-information/98ASB15740C.pdf 2016-10-31 V1003176855715 PSP 2 Mar 22, 2016 Package Information 98ASB15740C, 466-03, PLD-1.5 None /docs/en/package-information/98ASB15740C.pdf English documents 51489 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB15740C.pdf 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins /docs/en/package-information/98ASB15740C.pdf documents 302435339416912908 Package Information N en None D pdf E N N 98ASB15740C, PLD, 6.2x7.0x1.74, Pitch 7.09, 3 Pins 51.5 KB SOT1811-1 N V1003176855715 数据手册 1 /docs/en/data-sheet/MW6S004N.pdf 2016-10-31 1136501699625709838469 PSP 1 Jun 19, 2009 Data Sheet Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. None /docs/en/data-sheet/MW6S004N.pdf English documents 510614 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MW6S004N.pdf MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET /docs/en/data-sheet/MW6S004N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 4 N N MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET 510.6 KB MW6S004N N 1136501699625709838469 true Y Products

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