MRF1K50N 产品信息|NXP

MRF1K50N

不推荐用于新设计

MRF1K50N

不推荐用于新设计

特点


Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V

封装


FM4F: FM4F, plastic, flange mount flat package; 4 terminals; 9.96 mm x 32.26 mm x 3.81 mm body

购买选项

MRF1K50NR5

不推荐用于新设计

12NC: 935318822578

详细信息

订购

从分销商处购买

工作特点

参数
fi(RF) [max] (MHz)
500
Number of pins
4
Package Style
DFM
Amp Class
AB
Test Signal
Pulse
Supply Voltage (Typ) (V)
50
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.068
P1dB (Typ) (dBm)
61.8
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
1.8, 500
Efficiency (Typ) (%)
75.1
Frequency Band (Hz)
1800000, 500000000
参数
Description
Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
fi(RF) [min] (MHz)
1.8
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1500 @ Peak
P1dB (Typ) (W)
1500
Gain (Typ) (dB)
23.4
Power Gain (Typ) (dB) @ f (MHz)
23.4 @ 230
Frequency (Max) (MHz)
500
Frequency (Min) (MHz)
1.8
Frequency (Min-Max) (GHz)
0.0018000001 to 0.5
frange [max] (MHz)
500
frange [min] (MHz)
1.8
Rth(j-a) (K/W)
0.068
Matching
unmatched
Modes of Operation
pulsed radio frequency signal

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
MRF1K50NR5(935318822578)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
5281.4

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接无铅焊接
MRF1K50NR5
(935318822578)
No
3
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
MRF1K50NR5
(935318822578)
854129
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
MRF1K50NR5
(935318822578)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

更多信息 MRF1K50N

These high ruggedness devices, MRF1K50N and MRF1K50GN, are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.