MGD3100AM38EK 产品信息|NXP

购买选项

MGD3100AM38EK

使用寿命终止

12NC: 935435404574

详细信息

订购

MGD3100AM38EKR2

使用寿命终止

12NC: 935435404518

详细信息

订购

工作特点

参数
Device Function
HV Isolated IGBT & SiC Single gate driver IC
Logic Level (V)
3
Frequency (Max) (kHz)
40
Load Current (IL) [TYP] (A)
15
Number of Channels
1
Protection
desaturation, overcurrent, overtemperature, short-circuit, undervoltage
Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON))
500
Load Supply Voltage (Min) (V)
-12
参数
Load Supply Voltage (Max) (V)
25
Supply Voltage [min] (V)
5
Supply Voltage [max] (V)
40
Interface and Input Control
SPI / PWM
SPI [bits]
24
Ambient Operating Temperature (Min to Max) (℃)
-40 to 125
ASIL Certification
up to ASIL D

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标REACH SVHC重量(mg)
MGD3100AM38EK(935435404574)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
480.0
MGD3100AM38EKR2(935435404518)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
480.0

质量

部件/12NC安全保障功能安全湿度灵敏度等级(MSL)封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接无铅焊接
MGD3100AM38EK
(935435404574)
ISO 26262
3
260
40
MGD3100AM38EKR2
(935435404518)
ISO 26262
3
260
40

配送

部件/12NC协调关税 (美国)免责声明
MGD3100AM38EK
(935435404574)
854239
MGD3100AM38EKR2
(935435404518)
854239

停产和更换部件数据

部件/12NC停产通知上次购买日期上次发货日期替代器件
MGD3100AM38EK
(935435404574)
NOTICE
2023-04-26
2023-11-26
MGD3100BM38EK
(935445031574)
MGD3100AM38EKR2
(935435404518)
NOTICE
2023-04-26
2023-11-26
MGD3100BM38EKR2
(935445031518)

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
MGD3100AM38EK
(935435404574)
2023-01-262023-01-27202301026DNDiscontinuation Notification for NXP PL DES High Voltage Gate Driver GD3100
MGD3100AM38EKR2
(935435404518)

更多信息 GD3100

The GD3100 is an advanced single-channel gate driver for IGBTs/SiC. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.

  • Current and temperature sense minimizes IGBT/SiC stress during faults
  • Accurate and configurable under voltage lockout provides protection while ensuring sufficient gate drive voltage headroom
  • Autonomously manages severe faults and reports faults and status via INTB pin and an SPI interface. It is capable of directly driving gates of many IGBTs/SiC
  • Self-test, control and protection functions are included for the design of high-reliability systems
更多