Features
Battery Cell Controller, Advanced, 6 Channels, TPL, LQFP48.
Package
HLQFP48 LQFP64, plastic, low profile quad flat package; 64 terminals; 0.5 mm pitch; 10 mm x 10 mm x 1.4 mm body.
封装
SSOP32: SSOP32, plastic, shrink small outline package; 32 terminals; 0.65 mm pitch; 7.5 mm x 11 mm x 2.5 mm body
购买选项
MC33GD3100BEK
正常供应
12NC: 935444121574
详细信息
MC33GD3100BEKR2
正常供应
12NC: 935444121518
详细信息
工作特点
| 参数 | 值 |
|---|---|
Device Function | HV Isolated IGBT & SiC Single gate driver IC |
Logic Level (V) | 5 |
Frequency (Max) (kHz) | 40 |
Load Current (IL) [TYP] (A) | 15 |
Number of Channels | 1 |
Protection | desaturation, overcurrent, overtemperature, short-circuit, undervoltage |
Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON)) | 500 |
| 参数 | 值 |
|---|---|
Load Supply Voltage (Min) (V) | -12 |
Load Supply Voltage (Max) (V) | 25 |
Supply Voltage [min] (V) | 5 |
Supply Voltage [max] (V) | 40 |
SPI [bits] | 24 |
Ambient Operating Temperature (Min to Max) (℃) | -40 to 125 |
ASIL Certification | up to ASIL D |
环境
| 部件/12NC | 无铅 | 欧盟 RoHS | 无卤素 | RHF指标 | REACH SVHC | 重量（mg） |
|---|---|---|---|---|---|---|
MC33GD3100BEK(935444121574) | Yes | Yes Certificate Of Analysis (CoA) | Yes |  | REACH SVHC | 467.3 |
MC33GD3100BEKR2(935444121518) | Yes | Yes Certificate Of Analysis (CoA) | Yes | | REACH SVHC | 467.3 |
质量
| 部件/12NC | 安全保障功能安全 | 湿度灵敏度等级(MSL) | 封装体峰值温度（PPT）（C°） | Maximum Time at Peak Temperatures (s) | |||
|---|---|---|---|---|---|---|---|
| 无铅焊接 | 无铅焊接 | 无铅焊接 | |||||
MC33GD3100BEK (935444121574) | ISO 26262 | 3 | 260 | 40 | |||
MC33GD3100BEKR2 (935444121518) | ISO 26262 | 3 | 260 | 40 | |||
配送
| 部件/12NC | 协调关税 (美国)免责声明 |
|---|---|
MC33GD3100BEK (935444121574) | 854239 |
MC33GD3100BEKR2 (935444121518) | 854239 |
产品变更通知
| 部件/12NC | 发行日期 | 生效日期 | 产品更改通知 | 标题 |
|---|---|---|---|---|
MC33GD3100BEK (935444121574) | 2025-04-16 | 2025-05-26 | 202504006I | Freescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products |
MC33GD3100BEKR2 (935444121518) |
更多信息 GD3100
The GD3100 is an advanced single-channel gate driver for IGBTs/SiC. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.
- Current and temperature sense minimizes IGBT/SiC stress during faults
- Accurate and configurable under voltage lockout provides protection while ensuring sufficient gate drive voltage headroom
- Autonomously manages severe faults and reports faults and status via INTB pin and an SPI interface. It is capable of directly driving gates of many IGBTs/SiC
- Self-test, control and protection functions are included for the design of high-reliability systems