AFV10700H 产品信息|NXP

特点


Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V

封装


CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 9.78 mm x 34.04 mm x 3.75 mm body

购买选项

工作特点

参数
Frequency (Min) (MHz)
960
Frequency (Max) (MHz)
1215
Supply Voltage (Typ) (V)
52
参数
P1dB (Typ) (dBm)
58.5
P1dB (Typ) (W)
700
Die Technology
LDMOS

环境

部件/12NC无铅欧盟 RoHS无卤素RHF指标二级互连REACH SVHC重量(mg)
AFV10700HR5(935346523178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
6436.68

质量

部件/12NC安全保障功能安全封装体峰值温度(PPT)(C°)Maximum Time at Peak Temperatures (s)
无铅焊接无铅焊接
AFV10700HR5
(935346523178)
No
260
40

配送

部件/12NC协调关税 (美国)免责声明出口控制分类编号 (美国)
AFV10700HR5
(935346523178)
854233
EAR99

产品变更通知

部件/12NC发行日期生效日期产品更改通知标题
AFV10700HR5
(935346523178)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
AFV10700HR5
(935346523178)
2017-12-202018-01-03201710023INew PQ Label Input for Non-MPQ Shipments

更多信息 AFV10700H

These RF power transistors, AFV10700H, AFV10700HS and AFV10700GS, are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME and other complex pulse chains.