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紧凑列表
1.8-600 MHz, 150 W CW, 50 V RF Power LDMOS Transistor
- 建议不要在新设计中使用本页介绍的产品。
These high ruggedness devices, MMRF1320N and MMRF1320GN, are designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output designs allow wide frequency range utilization from 1.8 to 600 MHz.
TO-270WB-4, TO-270WBG-4 Package Images
产品详情
Features
- Wide operating frequency range
- Ruggedness
- Input and output allowing wide frequency range utilization
- Integrated stability enhancements
- Low thermal resistance
- Integrated ESD protection circuitry
- RoHS compliant
RF Performance Tables
Typical Performance
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 230 | CW | 150 | 26.3 | 72.0 |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | 150 Peak | 26.1 | 70.3 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | > 65:1 at all Phase Angles | 0.62 Peak (3 dB Overdrive) | 50 | No Device Degradation |
购买/参数
2 结果
不包含 2 不推荐用于新设计
部件 | 订购 | 计算机辅助设计模型 | 状态 | Frequency (Min) (MHz) | Frequency (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | 模具技术 |
|---|---|---|---|---|---|---|---|---|---|
使用寿命终止 | 1.8 | 600 | 50 | 51.8 | 150 | LDMOS | |||
使用寿命终止 | 1.8 | 600 | 50 | 51.8 | 150 | LDMOS |
4 文件
紧凑列表
封装信息 (2)
应用笔记 (1)
数据手册 (1)
设计资源
支持
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