设计文件
收到完整的详细信息。 请参阅产品足迹及更多信息 电子CAD文件.
1.8-600 MHz, 150 W CW, 50 V RF Power LDMOS Transistor
- 建议不要在新设计中使用本页介绍的产品。
These high ruggedness devices, MMRF1320N and MMRF1320GN, are designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output designs allow wide frequency range utilization from 1.8 to 600 MHz.
TO-270WB-4, TO-270WBG-4 Package Images
产品详情
Features
- Wide operating frequency range
- Ruggedness
- Input and output allowing wide frequency range utilization
- Integrated stability enhancements
- Low thermal resistance
- Integrated ESD protection circuitry
- RoHS compliant
部件编号包含： MMRF1320GN, MMRF1320N.
重要参数
-
- Frequency (Min) (MHz)
- 1.8
-
- Frequency (Max) (MHz)
- 600
-
- Supply Voltage (Typ) (V)
- 50
-
- P1dB (Typ) (dBm)
- 51.8
-
- P1dB (Typ) (W)
- 150
-
- Die Technology
- LDMOS
RF Performance Tables
Typical Performance
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 230 | CW | 150 | 26.3 | 72.0 |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | 150 Peak | 26.1 | 70.3 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 230 | Pulse (100 µsec, 20% Duty Cycle) | > 65:1 at all Phase Angles | 0.62 Peak (3 dB Overdrive) | 50 | No Device Degradation |
购买/参数
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